Kounye a, enprimant 3D (aparèy manifakti aditif) ap evolye rapidman, lajman ki itilize nan domèn fabrikasyon, medikal ak edikasyon.Nan tan kap vini an, ak pi vit vitès enprime ak yon pi gwo varyete materyèl, enprime 3D espere vin pi divèsifye ak gaye toupatou, espesyalman nan pwodiksyon Customized ak manifakti estrikti konplèks.
Nan enprimant 3D (aparèy manifakti aditif), lè l sèvi avèk MOSFET sitou fè fas a defi tankou dissipation chalè, espesyalman pandan gwo vitès, enprime dire lontan.Anplis de sa,MOSFETs yo sansib a fluctuations vòltaj, ki ka afekte presizyon enprime.Pri ak gwosè yo tou konsiderasyon nan konsepsyon ak antretyen.UsingWINSOKMOSFET ka ede w rezoud pwoblèm ki anwo yo.
Aplikasyon WINSOK MOSFET nan enprimant 3D, modèl aplikasyon prensipal yo:
| Nimewo pati | Konfigirasyon | Kalite | VDS | ID (A) | VGS(th)(v) | RDS(ON)(mΩ) | Ciss | Pake | |||
| @10V | |||||||||||
| (V) | Max. | Min. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| Selibatè | N-ch | 30 | 7 | 0.5 | 0.8 | 1.2 | - | - | 572 | SOT-23-3L | |
| Selibatè | N-ch | 30 | 100 | 1.5 | 1.8 | 2.5 | 3.3 | 4 | 1350 | DFN5X6-8 | |
| Selibatè | N-ch | 30 | 43 | 1.2 | 1.5 | 2.5 | 10 | 12 | 940 | TO-252 | |
| Selibatè | N-ch | 30 | 85 | 1 | 1.5 | 2.5 | 4.5 | 5.5 | 2295 | TO-252 | |
| Selibatè | N-ch | 30 | 160 | 1.5 | 1.9 | 2.5 | 2.3 | 3 | 2450 | TO-252 | |
| Selibatè | N-ch | 60 | 50 | 1.2 | 1.8 | 2.5 | 20 | 23 | 1680 | TO-252 | |
| Selibatè | N-ch | 60 | 60 | 1 | 1.8 | 3 | 10 | 12 | 1896 | TO-252 | |
| Selibatè | N-ch | 40 | 180 | 2 | 3 | 4 | 3 | 3.6 | 4426 | TO-263 | |
| Selibatè | N-ch | 40 | 220 | 2 | 3 | 4 | 2.5 | 3.2 | 5710 | TO-263 | |
Lòt nimewo materyèl mak ki koresponn ak WINSOK MOSFET ki anwo yo se:
Nimewo materyèl korespondan WINSOK MOSFET WST3400 yo se:WST3400AOS AO3400,AO3400A,AO3404.Onsemi,FAIRCHILD FDN537N.NIKO-SEM P3203CMG.Potens Semiconductor PDN3912S.DINTTS340.
Nimewo materyèl ki koresponn WINSOK MOSFET WSD30100DN56 yo se:WSD30100DN56AOS AON6354,AON6572,AON6314,AON6502,AON6510.Onsemi,FAIRCHILD NTMFS4946N.VISHAY,SiDRRA60DPSiDR390DPSiDR390DPSiDR390DPSiDR s STL65DN3LLH5, STL58N3LLH5.INFINEON,IR BSC014N03LSG,BSC016N03LSG,BSC014N03MSG,BSC016N03MSG .NXP NXPPSMN7R0-30YL.PANJIT PJQ5424.NIKO-SEM PK698SA.Potens Semiconductor PDC3960X.
Nimewo materyèl ki koresponn WINSOK MOSFET WSF3040 yo se:WSF3040AOS AOD32326,AOD418,AOD514,AOD516,AOD536,AOD558.Onsemi,FAIRCHILD FDD6296.STMicroelectronics STD40NFINEON0N3PHILL030NF09. 1.PANJIT PJD45N03.Sinopower SM3117NSU,SM3119NAU.NIKO-SEM PD600BA.Potens Semiconductor PDD3910.DINTEK ELECTRONICS DTU40N03.
Nimewo materyèl ki koresponn nan WINSOK MOSFET WSF3085 yo se:WSF3085AOS AOD4132,AOD508,AOD518.Onsemi,FAIRCHILD FDD050N03B.STMicroelectronics STD100N3LF3.INFINEON,IR IPD031N031N03PJ03. inopower SM3106NSU.NIKO-SEM PD548BA.Potens Semiconductor PDD3906.DINTEK ELECTRONICS DTU50N03 .
Nimewo materyèl korespondan WINSOK MOSFET WSF30160 yo se:WSF30160Onsemi,FAIRCHILD FDD8870.INFINEON,IR IRLR7843.
Nimewo materyèl ki koresponn nan WINSOK MOSFET WSF40N06 yo se:WSF40N06AOS AOD2606,AOD2610E,AOD442G,AOD66620.Onsemi,FAIRCHILD FDD10AN06A0.VISHAY SUD50N06-09LINF060N06-09L. L3G.TOSHIBA TK45S06K3L.PANJIT PJD45N06A.Sinopower SM6019NSU.Potens Semiconductor PDD6904. DINTEK ELECTRONICS DTU50N06.
Nimewo materyèl ki koresponn nan WINSOK MOSFET WSF60N06 yo se:WSF60N06AOS AOD2606,AOD2610E,AOD442G,AOD66620.STMicroelectronics STD20NF06LAG,STD20NF06LAG.INFINEON,IR.IRTOSJL06060606060606006 N06.Potens Semiconductor PDD6960.DINTEK ELECTRONICS DTU55N06.
Nimewo materyèl ki koresponn nan WINSOK MOSFET WSK180N04 yo se: WSK180N04AOS AOB1404L, AOB2140L, AOB2144L.STMicroelectronics STH160N4LF6-2.Nxperian PSMN1R1-40BS.Texasen Instruments1 CKSD90.
Nimewo materyèl korespondan WINSOK MOSFET WSK220N04 yo se:WSK220N04AOS AOB1404L,AOB2140L,AOB2144L.Onsemi,FAIRCHILD FDB8443.STMicroelectronics STB55NF06L.Potens Semiconductor PDH4970.
Lè poste: Dec-01-2023
