WSD100N15DN56G N-chanèl 150V 100A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD100N15DN56G MOSFET se 150V, aktyèl la se 100A, rezistans a se 6mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
Pwodwi pou pouvwa medikal MOSFET, PDs MOSFET, dron MOSFET, sigarèt elektwonik MOSFET, gwo aparèy MOSFET, ak zouti elektrik MOSFET.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 150 | V |
| VGS | Gate-Sous Voltage | ± 20 | V |
| ID | Kouran drenaj kontinyèl, VGS@ 10V (TC= 25℃) | 100 | A |
| IDM | Kouran drenaj enpulsyonèl | 360 | A |
| EAS | Enèji lavalas batman kè sèl | 400 | mJ |
| PD | Dissipasyon pouvwa total...C= 25℃) | 160 | W |
| RθJA | Rezistans tèmik, junction-anbyen | 62 | ℃/W |
| RθJC | Rezistans tèmik, junction-ka | 0.78 | ℃/W |
| TSTG | Ranje Tanperati Depo | -55 a 175 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 175 | ℃ |
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 150 | --- | --- | V |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS=10V, mwenD= 20A | --- | 9 | 12 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 2.0 | 3.0 | 4.0 | V |
| IDSS | Kouran Drenaj-Sous Flit | VDS=100V, VGS=0V, TJ= 25 ℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS= 0V | --- | --- | ± 100 | nA |
| Qg | Total Gate Charge | VDS= 50V, VGS=10V, mwenD= 20A | --- | 66 | --- | nC |
| Qgs | Pòtay-Sous chaj | --- | 26 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 18 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD= 50V,VGS= 10V RG= 2Ω, ID= 20A | --- | 37 | --- | ns |
| Tr | Leve tan | --- | 98 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 55 | --- | ||
| Tf | Tan Otòn | --- | 20 | --- | ||
| Ciss | Antre kapasite | VDS= 30V, VGS=0V, f=1MHz | --- | 5450 | --- | pF |
| Coss | Sòti kapasite | --- | 1730 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 195 | --- |
