WSD20100DN56 N-chanèl 20V 90A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj WSD20100DN56 MOSFET a se 20V, aktyèl la se 90A, rezistans a se 1.6mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
Elektwonik sigarèt MOSFET, dron MOSFET, zouti elektrik MOSFET, fascia zam MOSFET, PD MOSFET, ti aparèy nan kay la MOSFET.
WINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6572.
POTENS Semiconductor MOSFET PDC394X.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 20 | V |
| VGS | Gate-Sous Voltage | ±12 | V |
| ID@TC= 25 ℃ | Kouran drenaj kontinyèl1 | 90 | A |
| ID@TC= 100 ℃ | Kouran drenaj kontinyèl1 | 48 | A |
| IDM | Kouran drenaj enpulsyonèl2 | 270 | A |
| EAS | Enèji lavalas batman kè sèl3 | 80 | mJ |
| IAS | Kouran Lavalas | 40 | A |
| PD@TC= 25 ℃ | Dissipasyon pouvwa total4 | 83 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| RθJA | Rezistans tèmik Junction-anbyen1(t≦10S) | 20 | ℃/W |
| RθJA | Rezistans tèmik Junction-anbyen1(Eta fiks) | 55 | ℃/W |
| RθJC | Rezistans tèmik Junction-ka1 | 1.5 | ℃/W |
| Senbòl | Paramèt | Kondisyon yo | Min | Typ | Max | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 20 | 23 | --- | V |
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 0.5 | 0.68 | 1.0 | V |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS = 10V, ID = 20A | --- | 1.6 | 2.0 | mΩ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS = 4.5V, ID = 20A | 1.9 | 2.5 | mΩ | |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS = 2.5V, ID = 20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Kouran Drenaj-Sous Flit | VDS=16V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V, VGS=0V, TJ=125℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±10V, VDS=0V | --- | --- | ± 10 | uA |
| Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Chaj pòtay total (10V) | VDS=15V, VGS=10V, ID=20A | --- | 77 | --- | nC |
| Qgs | Gate-Sous Charge | --- | 8.7 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 14 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD=15V, VGS=10V, RG=3, ID = 20A | --- | 10.2 | --- | ns |
| Tr | Leve tan | --- | 11.7 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 56.4 | --- | ||
| Tf | Tan Otòn | --- | 16.2 | --- | ||
| Ciss | Antre kapasite | VDS=10V, VGS=0V, f=1MHz | --- | 4307 | --- | pF |
| Coss | Sòti kapasite | --- | 501 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 321 | --- | ||
| IS | Kontinyèl Sous Kouran1,5 | VG=VD= 0V , Fòs aktyèl | --- | --- | 50 | A |
| VSD | Dyòd Avant Voltage2 | VGS=0V, IS=1A, TJ=25℃ | --- | --- | 1.2 | V |
| trr | Tan Rekiperasyon Ranvèse | IF=20A, di/dt=100A/µs, TJ=25℃ | --- | 22 | --- | nS |
| Qrr | Ranvèse chaj rekiperasyon | --- | 72 | --- | nC |
