WSD2090DN56 N-chanèl 20V 80A DFN5 * 6-8 WINSOK MOSFET
Deskripsyon jeneral
WSD2090DN56 a se pi gwo pèfòmans tranche N-Ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon yo synchrone Buck Converter. WSD2090DN56 a satisfè kondisyon RoHS ak Green Product 100% EAS garanti ak fyab fonksyon konplè apwouve.
Karakteristik
Teknoloji Trench avanse dansite selil segondè, chaj Super Low Gate, ekselan n bès efè CdV / dt, 100% EAS garanti, aparèy vèt ki disponib.
Aplikasyon
Chanjman, Sistèm pouvwa, Chanjman chaj, sigarèt elektwonik, dron, zouti elektrik, zam fascia, PD, ti aparèy nan kay la, elatriye.
nimewo materyèl ki koresponn lan
AOS AON6572
Paramèt enpòtan
Evalyasyon maksimòm absoli (TC = 25 ℃ sof si yo te note otreman)
| Senbòl | Paramèt | Max. | Inite yo |
| VDSS | Drenaj-Sous Voltage | 20 | V |
| VGSS | Gate-Sous Voltage | ±12 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 80 | A |
| ID@TC=100℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 59 | A |
| IDM | Enpulsyon drenaj aktyèl note1 | 360 | A |
| EAS | Single Pulse Enèji lavalas note2 | 110 | mJ |
| PD | Dissipasyon pouvwa | 81 | W |
| RθJA | Rezistans tèmik, Junction nan ka | 65 | ℃/W |
| RθJC | Rezistans tèmik Junction-Ka 1 | 4 | ℃/W |
| TJ, TSTG | Fonksyònman ak Depo Tanperati Range | -55 a +175 | ℃ |
Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)
| Senbòl | Paramèt | Kondisyon yo | Min | Typ | Max | Inite yo |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250μA | 20 | 24 | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = 1mA | --- | 0.018 | --- | V/℃ |
| VGS(th) | Pòtay Limit Voltage | VDS = VGS, ID = 250μA | 0.50 | 0.65 | 1.0 | V |
| RDS(ON) | Estatik drenaj-sous sou-rezistans | VGS = 4.5V, ID = 30A | --- | 2.8 | 4.0 | mΩ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans | VGS = 2.5V, ID = 20A | --- | 4.0 | 6.0 | |
| IDSS | Zewo Gate Voltage Drenaj Kouran | VDS = 20V, VGS = 0V | --- | --- | 1 | μA |
| IGSS | Gate-Body Leakage Current | VGS = ± 10V, VDS = 0V | --- | --- | ± 100 | nA |
| Ciss | Antre kapasite | VDS = 10V, VGS = 0V, f = 1MHZ | --- | 3200 | --- | pF |
| Coss | Sòti kapasite | --- | 460 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 446 | --- | ||
| Qg | Total Gate Charge | VGS = 4.5V, VDS = 10V, ID = 30A | --- | 11.05 | --- | nC |
| Qgs | Gate-Sous Charge | --- | 1.73 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 3.1 | --- | ||
| tD(sou) | Tan delè vire-sou | VGS = 4.5V, VDS = 10V, ID = 30ARGEN = 1.8Ω | --- | 9.7 | --- | ns |
| tr | Vire-sou Tan leve | --- | 37 | --- | ||
| tD(off) | Tan reta pou fèmen | --- | 63 | --- | ||
| tf | Turn-off Tan otòn | --- | 52 | --- | ||
| VSD | Dyòd Avant Voltage | IS = 7.6A, VGS = 0V | --- | --- | 1.2 | V |
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