WSD2090DN56 N-chanèl 20V 80A DFN5 * 6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSD2090DN56

BVDSS:20V

RDSON:2.8mΩ

ID:80A

Chèn:N-chanèl

Pake:DFN5 * 6-8

Pwodwi pandan ete:Vòltaj la nan WSD2090DN56 MOSFET se 20V, aktyèl la se 80A, rezistans a se 2.8mΩ, kanal la se N-chanèl, ak pake a se DFN5 * 6-8.

Aplikasyon:Sigarèt elektwonik, dron, zouti elektrik, zam fascia, PD, ti aparèy nan kay la, elatriye.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSD2090DN56 a se pi gwo pèfòmans tranche N-Ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon yo synchrone Buck Converter.WSD2090DN56 a satisfè kondisyon RoHS ak Green Product 100% EAS garanti ak fyab fonksyon konplè apwouve.

Karakteristik

Teknoloji Trench avanse dansite selil segondè, Super Low Gate Charge, Ekselan CdV / dt efè n bès, 100% EAS Garanti, Aparèy Green Disponib

Aplikasyon

Chanjman, Sistèm pouvwa, Chanjman chaj, sigarèt elektwonik, dron, zouti elektrik, zam fascia, PD, ti aparèy nan kay la, elatriye.

nimewo materyèl ki koresponn lan

AOS AON6572

Paramèt enpòtan

Evalyasyon maksimòm absoli (TC = 25 ℃ sof si yo te note otreman)

Senbòl	Paramèt	Max.	Inite yo
VDSS	Drenaj-Sous Voltage	20	V
VGSS	Gate-Sous Voltage	±12	V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ 10V1	80	A
ID@TC=100℃	Kouran drenaj kontinyèl, VGS @ 10V1	59	A
IDM	Enpulsyon drenaj aktyèl note1	360	A
EAS	Single Pulse Enèji lavalas note2	110	mJ
PD	Dissipasyon pouvwa	81	W
RθJA	Rezistans tèmik, Junction nan ka	65	℃/W
RθJC	Rezistans tèmik Junction-Ka 1	4	℃/W
TJ, TSTG	Fonksyònman ak Depo Tanperati Range	-55 a +175	℃

Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)

Senbòl	Paramèt	Kondisyon	Min	Typ	Max	Inite yo
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250μA	20	24	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = 1mA	---	0.018	---	V/℃
VGS(th)	Pòtay Limit Voltage	VDS = VGS, ID = 250μA	0.50	0.65	1.0	V
RDS(ON)	Estatik drenaj-sous sou-rezistans	VGS = 4.5V, ID = 30A	---	2.8	4.0	mΩ
RDS(ON)	Estatik drenaj-sous sou-rezistans	VGS = 2.5V, ID = 20A	---	4.0	6.0	mΩ
IDSS	Zewo Gate Voltage Drenaj Kouran	VDS = 20V, VGS = 0V	---	---	1	μA
IGSS	Gate-Body Leakage Current	VGS = ± 10V, VDS = 0V	---	---	± 100	nA
Ciss	Antre kapasite	VDS = 10V, VGS = 0V, f = 1MHZ	---	3200	---	pF
Coss	Sòti kapasite		---	460	---
Crss	Ranvèse kapasite transfè		---	446	---
Qg	Total Gate Charge	VGS = 4.5V, VDS = 10V, ID = 30A	---	11.05	---	nC
Qgs	Pòtay-Sous chaj		---	1.73	---
Qgd	Gate-Drenaj chaj		---	3.1	---
tD(sou)	Tan delè vire-sou	VGS = 4.5V, VDS = 10V, ID = 30ARGEN = 1.8Ω	---	9.7	---	ns
tr	Vire-sou Tan leve		---	37	---
tD(off)	Tan reta pou fèmen		---	63	---
tf	Turn-off Tan otòn		---	52	---
VSD	Dyòd Avant Voltage	IS = 7.6A, VGS = 0V	---	---	1.2	V