WSD20L120DN56 P-chanèl -20V -120A DFN5 * 6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSD20L120DN56

BVDSS:-20V

RDSON:2.1mΩ

ID:-120A

Chèn:P-chanèl

Pake:DFN5 * 6-8

Pwodwi pandan ete:MOSFET WSD20L120DN56 a opere nan -20 vòlt ak trase yon kouran nan -120 amp.Li gen yon rezistans nan 2.1 milliohms, yon P-chanèl, epi li vini nan yon pake DFN5 * 6-8.

Aplikasyon:E-sigarèt, chajè san fil, motè, dron, ekipman medikal, chajè machin, contrôleur, aparèy dijital, ti aparèy, ak elektwonik konsomatè.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSD20L120DN56 a se yon MOSFET P-Ch ki pi wo ak yon estrikti selil ki wo dansite, ki bay sipèb RDSON ak chaj pòtay pou pifò itilizasyon konvètisè buck synchrone.WSD20L120DN56 a satisfè kondisyon 100% EAS pou RoHS ak pwodwi zanmitay anviwònman an, ak apwobasyon fyab plen fonksyon.

Karakteristik

1, avanse gwo dansite selil teknoloji Trench
2, chaj Super Low Gate
3, ekselan CdV/dt efè bès
4, 100% EAS Garanti 5, Aparèy Green Disponib

Aplikasyon

Gwo Frekans Point-of-Chaj Synchrone Buck Converter pou MB/NB/UMPC/VGA, Networking DC-DC Power System, Chaj switch, E-sigarèt, Wireless Charger, Motors, Drones, Medical, Machin Charger, Controller, Digital Products, Ti Aparèy Kay, Elektwonik Konsomatè.

nimewo materyèl ki koresponn lan

AOS AON6411,NIKO PK5A7BA

Paramèt enpòtan

Senbòl	Paramèt	Rating		Inite yo
Senbòl	Paramèt	10s	Eta Stable	Inite yo
VDS	Drenaj-Sous Voltage	-20		V
VGS	Gate-Sous Voltage	± 10		V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ -10V1	-120		A
ID@TC=100℃	Kouran drenaj kontinyèl, VGS @ -10V1	-69.5		A
ID@TA=25℃	Kouran drenaj kontinyèl, VGS @ -10V1	-25	-22	A
ID@TA=70℃	Kouran drenaj kontinyèl, VGS @ -10V1	-24	-18	A
IDM	Kouran drenaj enpulsyonèl2	-340		A
EAS	Single Pulse Lavalas Enèji3	300		mJ
IAS	Kouran Lavalas	-36		A
PD@TC=25℃	Dissipasyon pouvwa total4	130		W
PD@TA=25℃	Dissipasyon pouvwa total4	6.8	6.25	W
TSTG	Ranje Tanperati Depo	-55 a 150		℃
TJ	Operasyon Junction Tanperati Range	-55 a 150		℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = -250uA	-20	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = -1mA	---	-0.0212	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS=-4.5V, ID=-20A	---	2.1	2.7	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2					mΩ
		VGS=-2.5V, ID=-20A	---	2.8	3.7
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID =-250uA	-0.4	-0.6	-1.0	V
		VGS = VDS, ID =-250uA
△VGS(th)	VGS(th) Koefisyan Tanperati		---	4.8	---	mV/℃
IDSS	Kouran Drenaj-Sous Flit	VDS=-20V, VGS=0V, TJ=25℃	---	---	-1	uA
IDSS	Kouran Drenaj-Sous Flit					uA
		VDS=-20V, VGS=0V, TJ=55℃	---	---	-6
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS=-5V, ID=-20A	---	100	---	S
Rg	Rezistans pòtay	VDS=0V, VGS=0V, f=1MHz	---	2	5	Ω
Qg	Total chaj pòtay (-4.5V)	VDS=-10V, VGS=-4.5V, ID=-20A	---	100	---	nC
Qgs	Pòtay-Sous chaj		---	21	---
Qgd	Gate-Drenaj chaj		---	32	---
Td(sou)	Tan delè vire-sou	VDD=-10V, VGEN=-4.5V, RG = 3Ω ID = -1A, RL = 0.5Ω	---	20	---	ns
Tr	Leve tan		---	50	---
Td (off)	Tan delè pou fèmen		---	100	---
Tf	Tan Otòn		---	40	---
Ciss	Antre kapasite	VDS=-10V, VGS=0V, f=1MHz	---	4950	---	pF
Coss	Sòti kapasite		---	380	---
Crss	Ranvèse kapasite transfè		---	290	---