WSD30140DN56 N-chanèl 30V 85A DFN5 * 6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSD30140DN56

BVDSS:30V

RDSON:1.7mΩ

ID:85A

Chèn:N-chanèl

Pake:DFN5 * 6-8

Pwodwi pandan ete:Vòltaj la nan WSD30140DN56 MOSFET se 30V, aktyèl la se 85A, rezistans a se 1.7mΩ, kanal la se N-chanèl, ak pake a se DFN5 * 6-8.

Aplikasyon:Sigarèt elektwonik, chajè san fil, dron, swen medikal, chajè machin, contrôleur, pwodwi dijital, ti aparèy, elektwonik konsomatè, elatriye.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSD30140DN56 a se pi gwo pèfòmans tranche N-chanèl MOSFET ak dansite selil trè wo bay ekselan RDSON ak chaj pòtay pou pifò aplikasyon pou konvètisè buck synchrone.WSD30140DN56 konfòme ak kondisyon RoHS ak pwodwi vèt, 100% garanti EAS, fyab fonksyon konplè apwouve.

Karakteristik

Teknoloji Trench avanse dansite selil segondè, chaj ultra-ba, ekselan diminisyon efè CdV/dt, 100% garanti EAS, aparèy vèt ki disponib.

Aplikasyon

High-frekans pwen-of-chaj senkronizasyon, Buck convertisseurs, rezo DC-DC sistèm pouvwa, aplikasyon pou zouti elektrik, sigarèt elektwonik, chaje san fil, dron, swen medikal, chaje machin, contrôleur, pwodwi dijital, ti aparèy, elektwonik konsomatè.

nimewo materyèl ki koresponn lan

AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314.SOU NTMFS4847N.VISHAY SiRA62DP.ST STL86N3LLH6AG.INFINEON BSC050N03MSG.TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A.NXP PH2520U.TOSHIBA TPH4R803PL TPH3R203NL.ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN.PANJIT PJQ5410.AP AP3D5R0MT.NIKO PK610SA, PK510BA.POTENS PDC3803R

Paramèt enpòtan

Senbòl	Paramèt	Rating	Inite yo
VDS	Drenaj-Sous Voltage	30	V
VGS	Gate-Sous Voltage	± 20	V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ 10V1,7	85	A
ID@TC=70℃	Kouran drenaj kontinyèl, VGS @ 10V1,7	65	A
IDM	Kouran drenaj enpulsyonèl2	300	A
PD@TC=25℃	Dissipasyon pouvwa total4	50	W
TSTG	Ranje Tanperati Depo	-55 a 150	℃
TJ	Operasyon Junction Tanperati Range	-55 a 150	℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250uA	30	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = 1mA	---	0.02	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 10V, ID = 20A	---	1.7	2.4	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 4.5V, ID = 15A		2.5	3.3	mΩ
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID = 250uA	1.2	1.7	2.5	V
	Kouran Drenaj-Sous Flit	VDS=24V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit	VDS=24V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS = 5V, ID = 20A	---	90	---	S
Qg	Chaj pòtay total (4.5V)	VDS=15V, VGS=4.5V, ID=20A	---	26	---	nC
Qgs	Pòtay-Sous chaj		---	9.5	---
Qgd	Gate-Drenaj chaj		---	11.4	---
Td(sou)	Tan delè vire-sou	VDD=15V, VGEN=10V, RG=3Ω, RL=0.75Ω.	---	11	---	ns
Tr	Leve tan		---	6	---
Td (off)	Tan delè pou fèmen		---	38.5	---
Tf	Tan Otòn		---	10	---
Ciss	Antre kapasite	VDS=15V, VGS=0V, f=1MHz	---	3000	---	pF
Coss	Sòti kapasite		---	1280	---
Crss	Ranvèse kapasite transfè		---	160	---