WSD30150ADN56 N-chanèl 30V 145A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj WSD30150DN56 MOSFET a se 30V, aktyèl la se 150A, rezistans a se 1.8mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
E-sigarèt MOSFET, san fil chaje MOSFET, dron MOSFET, swen medikal MOSFET, chajè machin MOSFET, contrôleur MOSFET, pwodwi dijital MOSFET, ti aparèy nan kay la MOSFET, konsomatè elektwonik MOSFET.
WINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6512,AONS3234.
Onsemi,FAIRCHILD MOSFET FDMC81DCCM.
NXP MOSFET PSMN1R7-3YL.
TOSHIBA MOSFET TPH1R43NL.
PANJIT MOSFET PJQ5428.
NIKO-SEM MOSFET PKC26BB,PKE24BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS@ 10V1,7 | 150 | A |
| ID@TC= 100℃ | Kouran drenaj kontinyèl, VGS@ 10V1,7 | 83 | A |
| IDM | Kouran drenaj enpulsyonèl2 | 200 | A |
| EAS | Enèji lavalas batman kè sèl3 | 125 | mJ |
| IAS | Kouran Lavalas | 50 | A |
| PD@TC=25℃ | Dissipasyon pouvwa total4 | 62.5 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoefisyan Tanperati | Referans a 25℃, mwenD= 1mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS= 10V, mwenD= 20A | --- | 1.8 | 2.4 | mΩ |
| VGS=4.5V, mwenD= 15A | 2.4 | 3.2 | ||||
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 1.4 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Koefisyan Tanperati | --- | -6.1 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS= 24V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS= 24V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Transkonduktans Avant | VDS=5V, mwenD= 10A | --- | 27 | --- | S |
| Rg | Rezistans pòtay | VDS= 0V, VGS=0V, f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Chaj pòtay total (4.5V) | VDS= 15V, VGS=4.5V, mwenD= 30A | --- | 26 | --- | nC |
| Qgs | Pòtay-Sous chaj | --- | 9.5 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 11.4 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD= 15V, VGEN= 10V, RG=6Ω, mwenD= 1A, RL = 15Ω. | --- | 20 | --- | ns |
| Tr | Leve tan | --- | 12 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 69 | --- | ||
| Tf | Tan Otòn | --- | 29 | --- | ||
| Ciss | Antre kapasite | VDS= 15V, VGS=0V, f=1MHz | 2560 | 3200 | 3850 | pF |
| Coss | Sòti kapasite | 560 | 680 | 800 | ||
| Crss | Ranvèse kapasite transfè | 260 | 320 | 420 |
