WSD3023DN56 N-Ch ak P-chanèl 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
Deskripsyon jeneral
WSD3023DN56 a se pi gwo pèfòmans tranche N-ch ak P-ch MOSFET ak dansite selil ekstrèm segondè, ki bay RDSON ekselan ak chaj pòtay pou pifò aplikasyon pou konvètisè buck synchrone. WSD3023DN56 a satisfè kondisyon RoHS ak Green Product 100% EAS garanti ak fyab fonksyon konplè apwouve.
Karakteristik
Teknoloji Trench avanse dansite selil segondè, Super Low Gate Charge, Ekselan CdV/dt efè n bès, 100% EAS Garanti, Aparèy vèt ki disponib.
Aplikasyon
High Frekans Point-of-Chaj Synchrone Buck Converter pou MB/NB/UMPC/VGA, Rezo DC-DC Power System, CCFL Back-light Inverter, Dron, motè, elektwonik otomobil, gwo aparèy.
nimewo materyèl ki koresponn lan
PANJIT PJQ5606
Paramèt enpòtan
| Senbòl | Paramèt | Rating | Inite yo | |
| N-ch | P-ch | |||
| VDS | Drenaj-Sous Voltage | 30 | -30 | V |
| VGS | Gate-Sous Voltage | ± 20 | ± 20 | V |
| ID | Kouran drenaj kontinyèl, VGS (NP) = 10V, Ta = 25 ℃ | 14* | -12 | A |
| Kouran drenaj kontinyèl, VGS (NP) = 10V, Ta = 70 ℃ | 7.6 | -9.7 | A | |
| IDP a | Batman kè drenaj aktyèl teste, VGS (NP) = 10V | 48 | -48 | A |
| EAS c | Enèji lavalas, batman kè sèl, L=0.5mH | 20 | 20 | mJ |
| IAS c | Kouran lavalas, batman kè sèl, L=0.5mH | 9 | -9 | A |
| PD | Dissipasyon pouvwa total, Ta = 25 ℃ | 5.25 | 5.25 | W |
| TSTG | Ranje Tanperati Depo | -55 a 175 | -55 a 175 | ℃ |
| TJ | Operasyon Junction Tanperati Range | 175 | 175 | ℃ |
| RqJA b | Rezistans tèmik-Junksyon nan anbyen, eta fiks | 60 | 60 | ℃/W |
| RqJC | Rezistans tèmik-Junksyon nan ka, Eta fiks | 6.25 | 6.25 | ℃/W |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 30 | --- | --- | V |
| RDS(ON)d | Estatik drenaj-sous sou-rezistans | VGS = 10V, ID = 8A | --- | 14 | 18.5 | mΩ |
| VGS = 4.5V, ID = 5A | --- | 17 | 25 | |||
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 1.3 | 1.8 | 2.3 | V |
| IDSS | Kouran Drenaj-Sous Flit | VDS=20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V, VGS=0V, TJ=85℃ | --- | --- | 30 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
| Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 1.7 | 3.4 | Ω |
| Qge | Total Gate Charge | VDS = 15V, VGS = 4.5V, IDS = 8A | --- | 5.2 | --- | nC |
| Qgse | Gate-Sous Charge | --- | 1.0 | --- | ||
| Qgde | Gate-Drenaj chaj | --- | 2.8 | --- | ||
| Td(on)e | Tan delè vire-sou | VDD = 15V, RL = 15R, IDS = 1A, VGEN = 10V, RG = 6R. | --- | 6 | --- | ns |
| Tre | Leve tan | --- | 8.6 | --- | ||
| Td(off)e | Tan delè pou fèmen | --- | 16 | --- | ||
| Tfe | Tan Otòn | --- | 3.6 | --- | ||
| Cisse | Antre kapasite | VDS=15V, VGS=0V, f=1MHz | --- | 545 | --- | pF |
| Cosse | Sòti kapasite | --- | 95 | --- | ||
| Crsse | Ranvèse kapasite transfè | --- | 55 | --- |
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