WSD3023DN56 N-Ch ak P-chanèl 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Chèn:N-Ch ak P-chanèl

Pake:DFN5 * 6-8

Pwodwi pandan ete:Vòltaj WSD3023DN56 MOSFET se 30V/-30V, aktyèl la se 14A/-12A, rezistans a se 14mΩ/23mΩ, kanal la se N-Ch ak P-Chanèl, ak pake a se DFN5 * 6-8.

Aplikasyon:Drones, motè, elektwonik otomobil, gwo aparèy.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSD3023DN56 a se pi gwo pèfòmans tranche N-ch ak P-ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon yo synchrone Buck Converter.WSD3023DN56 a satisfè kondisyon RoHS ak Green Product 100% EAS garanti ak fyab fonksyon konplè apwouve.

Karakteristik

Teknoloji Trench avanse dansite selil segondè, Super Low Gate Charge, Ekselan CdV/dt efè n bès, 100% EAS Garanti, Aparèy vèt ki disponib.

Aplikasyon

High Frekans Point-of-Chaj Synchrone Buck Converter pou MB/NB/UMPC/VGA, Rezo DC-DC Power System, CCFL Back-light Inverter, Dron, motè, elektwonik otomobil, gwo aparèy.

nimewo materyèl ki koresponn lan

PANJIT PJQ5606

Paramèt enpòtan

Senbòl	Paramèt	Rating		Inite yo
Senbòl	Paramèt	N-ch	P-ch	Inite yo
VDS	Drenaj-Sous Voltage	30	-30	V
VGS	Gate-Sous Voltage	± 20	± 20	V
ID	Kouran drenaj kontinyèl, VGS (NP) = 10V, Ta = 25 ℃	14*	-12	A
ID	Kouran drenaj kontinyèl, VGS (NP) = 10V, Ta = 70 ℃	7.6	-9.7	A
IDP a	Batman kè drenaj aktyèl teste, VGS (NP) = 10V	48	-48	A
EAS c	Enèji lavalas, batman kè sèl, L=0.5mH	20	20	mJ
IAS c	Kouran lavalas, batman kè sèl, L=0.5mH	9	-9	A
PD	Dissipasyon pouvwa total, Ta = 25 ℃	5.25	5.25	W
TSTG	Ranje Tanperati Depo	-55 a 175	-55 a 175	℃
TJ	Operasyon Junction Tanperati Range	175	175	℃
RqJA b	Rezistans tèmik-Junksyon nan anbyen, eta fiks	60	60	℃/W
RqJC	Rezistans tèmik-Junksyon nan ka, Eta fiks	6.25	6.25	℃/W

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250uA	30	---	---	V
RDS(ON)d	Estatik drenaj-sous sou-rezistans	VGS = 10V, ID = 8A	---	14	18.5	mΩ
RDS(ON)d	Estatik drenaj-sous sou-rezistans	VGS = 4.5V, ID = 5A	---	17	25	mΩ
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID = 250uA	1.3	1.8	2.3	V
IDSS	Kouran Drenaj-Sous Flit	VDS=20V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit	VDS=20V, VGS=0V, TJ=85℃	---	---	30	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
Rg	Rezistans pòtay	VDS=0V, VGS=0V, f=1MHz	---	1.7	3.4	Ω
Qge	Total Gate Charge	VDS = 15V, VGS = 4.5V, IDS = 8A	---	5.2	---	nC
Qgse	Pòtay-Sous chaj		---	1.0	---
Qgde	Gate-Drenaj chaj		---	2.8	---
Td(on)e	Tan delè vire-sou	VDD = 15V, RL = 15R, IDS = 1A, VGEN = 10V, RG = 6R.	---	6	---	ns
Tre	Leve tan		---	8.6	---
Td(off)e	Tan delè pou fèmen		---	16	---
Tfe	Tan Otòn		---	3.6	---
Cisse	Antre kapasite	VDS=15V, VGS=0V, f=1MHz	---	545	---	pF
Cosse	Sòti kapasite		---	95	---
Crsse	Ranvèse kapasite transfè		---	55	---