WSD30350DN56G N-chanèl 30V 350A DFN5X6-8 WINSOK MOSFET

pwodwi yo

WSD30350DN56G N-chanèl 30V 350A DFN5X6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Pati:WSD30350DN56G

BVDSS:30V

ID:350A

RDSON:0.48mΩ 

Chèn:N-chanèl

Pake:DFN5X6-8


Pwodwi detay

Aplikasyon

Tags pwodwi

Apèsi sou pwodwi WINSOK MOSFET

Vòltaj la nan WSD30350DN56G MOSFET se 30V, aktyèl la se 350A, rezistans a se 1.8mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.

WINSOK MOSFET zòn aplikasyon yo

E-sigarèt MOSFET, san fil chaje MOSFET, dron MOSFET, swen medikal MOSFET, chajè machin MOSFET, contrôleur MOSFET, pwodwi dijital MOSFET, ti aparèy nan kay la MOSFET, konsomatè elektwonik MOSFET.

MOSFET paramèt

Senbòl

Paramèt

Rating

Inite yo

VDS

Drenaj-Sous Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

Kouran drenaj kontinyèlSilisyòm limite1,7

350

A

ID@TC=70

Kouran drenaj kontinyèl (Silisyòm limite1,7

247

A

IDM

Kouran drenaj enpulsyonèl2

600

A

EAS

Enèji lavalas batman kè sèl3

1800

mJ

IAS

Kouran Lavalas

100

A

PD@TC=25

Dissipasyon pouvwa total4

104

W

TSTG

Ranje Tanperati Depo

-55 a 150

TJ

Operasyon Junction Tanperati Range

-55 a 150

 

Senbòl

Paramèt

Kondisyon

Min.

Typ.

Max.

Inite

BVDSS

Drenaj-Sous Pann Voltage VGS=0V, mwenD= 250uA

30

---

---

V

BVDSS/△TJ

BVDSSKoefisyan Tanperati Referans a 25, mwenD= 1mA

---

0.022

---

V/

RDS(ON)

Estatik drenaj-sous sou-rezistans2 VGS= 10V, mwenD= 20A

---

0.48

0.62

mΩ
VGS=4.5V, mwenD= 20A

---

0.72

0.95

VGS(th)

Pòtay Limit Voltage VGS=VDS, mwenD= 250uA

1.2

1.5

2.5

V

VGS(th)

VGS(th)Koefisyan Tanperati

---

-6.1

---

mV/

IDSS

Kouran Drenaj-Sous Flit VDS= 24V, VGS=0V, TJ=25

---

---

1

uA

VDS= 24V, VGS=0V, TJ=55

---

---

5

IGSS

Gate-Source Leakage Current VGS=±20V, VDS= 0V

---

---

±100

nA

gfs

Transkonduktans Avant VDS=5V, mwenD= 10A

---

40

---

S

Rg

Rezistans pòtay VDS= 0V, VGS=0V, f=1MHz

---

3.8

1.5

Ω

Qg

Chaj pòtay total (4.5V) VDS= 15V, VGS=4.5V, mwenD= 20A

---

89

---

nC

Qgs

Pòtay-Sous chaj

---

37

---

Qgd

Gate-Drenaj chaj

---

20

---

Td(sou)

Tan delè vire-sou VDD= 15V, VGEN= 10V,

RG=1Ω, mwenD= 10A

---

25

---

ns

Tr

Leve tan

---

34

---

Td (off)

Tan delè pou fèmen

---

61

---

Tf

Tan Otòn

---

18

---

Ciss

Antre kapasite VDS= 15V, VGS=0V, f=1MHz

---

7845

---

pF

Coss

Sòti kapasite

---

4525

---

Crss

Ranvèse kapasite transfè

---

139

---


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