WSD40110DN56G N-chanèl 40V 110A DFN5X6-8 WINSOK MOSFET

pwodwi yo

WSD40110DN56G N-chanèl 40V 110A DFN5X6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Pati:WSD40110DN56G

BVDSS:40V

ID:110A

RDSON:2.5mΩ 

Chèn:N-chanèl

Pake:DFN5X6-8


Pwodwi detay

Aplikasyon

Tags pwodwi

Apèsi sou pwodwi WINSOK MOSFET

Vòltaj la nan WSD4080DN56 MOSFET se 40V, aktyèl la se 85A, rezistans a se 4.5mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.

WINSOK MOSFET zòn aplikasyon yo

Ti aparèy MOSFET, aparèy pòtatif MOSFET, motè MOSFET.

WINSOK MOSFET koresponn ak lòt nimewo materyèl mak

AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.

MOSFET paramèt

Senbòl

Paramèt

Rating

Inite yo

VDS

Drenaj-Sous Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC= 25 ℃

Kouran drenaj kontinyèl, VGS @ 10V1

85

A

ID@TC= 100 ℃

Kouran drenaj kontinyèl, VGS @ 10V1

58

A

IDM

Kouran drenaj enpulsyonèl2

100

A

EAS

Enèji lavalas batman kè sèl3

110.5

mJ

IAS

Kouran Lavalas

47

A

PD@TC= 25 ℃

Dissipasyon pouvwa total4

52.1

W

TSTG

Ranje Tanperati Depo

-55 a 150

TJ

Operasyon Junction Tanperati Range

-55 a 150

RθJA

Rezistans tèmik Junction-Anbian1

62

/W

RθJC

Rezistans tèmik Junction-Ka1

2.4

/W

 

Senbòl

Paramèt

Kondisyon

Min.

Typ.

Max.

Inite

BVDSS

Drenaj-Sous Pann Voltage VGS = 0V, ID = 250uA

40

---

---

V

RDS(ON)

Estatik drenaj-sous sou-rezistans2 VGS = 10V, ID = 10A

---

4.5

6.5

VGS = 4.5V, ID = 5A

---

6.4

8.5

VGS(th)

Pòtay Limit Voltage VGS = VDS, ID = 250uA

1.0

---

2.5

V

IDSS

Kouran Drenaj-Sous Flit VDS=32V, VGS=0V, TJ=25

---

---

1

uA

VDS=32V, VGS=0V, TJ=55

---

---

5

IGSS

Gate-Source Leakage Current VGS=±20V, VDS=0V

---

---

± 100

nA

gfs

Transkonduktans Avant VDS = 10V, ID = 5A

---

27

---

S

Qg

Chaj pòtay total (4.5V) VDS=20V, VGS=4.5V, ID=10A

---

20

---

nC

Qgs

Pòtay-Sous chaj

---

5.8

---

Qgd

Gate-Drenaj chaj

---

9.5

---

Td(sou)

Tan delè vire-sou VDD = 15V, VGS = 10V RG = 3.3Ω

ID = 1A

---

15.2

---

ns

Tr

Leve tan

---

8.8

---

Td (off)

Tan delè pou fèmen

---

74

---

Tf

Tan Otòn

---

7

---

Ciss

Antre kapasite VDS=15V, VGS=0V, f=1MHz

---

2354

---

pF

Coss

Sòti kapasite

---

215

---

Crss

Ranvèse kapasite transfè

---

175

---

IS

Kontinyèl Sous Kouran1,5 VG=VD= 0V , Fòs aktyèl

---

---

70

A

VSD

Dyòd Avant Voltage2 VGS=0V, IS=1A, TJ=25

---

---

1

V


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