WSD40110DN56G N-chanèl 40V 110A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD4080DN56 MOSFET se 40V, aktyèl la se 85A, rezistans a se 4.5mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
Ti aparèy MOSFET, aparèy pòtatif MOSFET, motè MOSFET.
WINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC= 25 ℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 85 | A |
| ID@TC= 100 ℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 58 | A |
| IDM | Kouran drenaj enpulsyonèl2 | 100 | A |
| EAS | Enèji lavalas batman kè sèl3 | 110.5 | mJ |
| IAS | Kouran Lavalas | 47 | A |
| PD@TC= 25 ℃ | Dissipasyon pouvwa total4 | 52.1 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| RθJA | Rezistans tèmik Junction-Anbian1 | 62 | ℃/W |
| RθJC | Rezistans tèmik Junction-Ka1 | 2.4 | ℃/W |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 40 | --- | --- | V |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS = 10V, ID = 10A | --- | 4.5 | 6.5 | mΩ |
| VGS = 4.5V, ID = 5A | --- | 6.4 | 8.5 | |||
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 1.0 | --- | 2.5 | V |
| IDSS | Kouran Drenaj-Sous Flit | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktans Avant | VDS = 10V, ID = 5A | --- | 27 | --- | S |
| Qg | Chaj pòtay total (4.5V) | VDS=20V, VGS=4.5V, ID=10A | --- | 20 | --- | nC |
| Qgs | Gate-Sous Charge | --- | 5.8 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 9.5 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD = 15V, VGS = 10V RG = 3.3Ω ID = 1A | --- | 15.2 | --- | ns |
| Tr | Leve tan | --- | 8.8 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 74 | --- | ||
| Tf | Tan Otòn | --- | 7 | --- | ||
| Ciss | Antre kapasite | VDS=15V, VGS=0V, f=1MHz | --- | 2354 | --- | pF |
| Coss | Sòti kapasite | --- | 215 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 175 | --- | ||
| IS | Kontinyèl Sous Kouran1,5 | VG=VD= 0V , Fòs aktyèl | --- | --- | 70 | A |
| VSD | Dyòd Avant Voltage2 | VGS=0V, IS=1A, TJ=25℃ | --- | --- | 1 | V |
