WSD40120DN56 N-chanèl 40V 120A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD40120DN56 MOSFET se 40V, aktyèl la se 120A, rezistans a se 1.85mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
E-sigarèt MOSFET, san fil chaje MOSFET, dron MOSFET, swen medikal MOSFET, chajè machin MOSFET, contrôleur MOSFET, pwodwi dijital MOSFET, ti aparèy nan kay la MOSFET, konsomatè elektwonik MOSFET.
WINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET TPH484SFIT 544.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS@ 10V1,7 | 120 | A |
| ID@TC= 100℃ | Kouran drenaj kontinyèl, VGS@ 10V1,7 | 100 | A |
| IDM | Kouran drenaj enpulsyonèl2 | 400 | A |
| EAS | Enèji lavalas batman kè sèl3 | 240 | mJ |
| IAS | Kouran Lavalas | 31 | A |
| PD@TC=25℃ | Dissipasyon pouvwa total4 | 104 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoefisyan Tanperati | Referans a 25℃, mwenD= 1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS = 10V, mwenD= 30A | --- | 1.85 | 2.4 | mΩ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS = 4.5V, mwenD= 20A | --- | 2.5 | 3.3 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 1.5 | 1.8 | 2.5 | V |
| △VGS(th) | VGS(th)Koefisyan Tanperati | --- | -6,94 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Transkonduktans Avant | VDS=5V, mwenD= 20A | --- | 55 | --- | S |
| Rg | Rezistans pòtay | VDS= 0V, VGS=0V, f=1MHz | --- | 1.1 | 2 | Ω |
| Qg | Chaj pòtay total (10V) | VDS= 20V, VGS= 10V, mwenD= 10A | --- | 76 | 91 | nC |
| Qgs | Gate-Sous Charge | --- | 12 | 14.4 | ||
| Qgd | Gate-Drenaj chaj | --- | 15.5 | 18.6 | ||
| Td(sou) | Tan delè vire-sou | VDD= 30V, VGEN= 10V, RG=1Ω, mwenD=1A,RL=15Ω. | --- | 20 | 24 | ns |
| Tr | Leve tan | --- | 10 | 12 | ||
| Td (off) | Tan delè pou fèmen | --- | 58 | 69 | ||
| Tf | Tan Otòn | --- | 34 | 40 | ||
| Ciss | Antre kapasite | VDS= 20V, VGS=0V, f=1MHz | --- | 4350 | --- | pF |
| Coss | Sòti kapasite | --- | 690 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 370 | --- |
