WSD4018DN22 P-chanèl -40V -18A DFN2X2-6L WINSOK MOSFET

pwodwi yo

WSD4018DN22 P-chanèl -40V -18A DFN2X2-6L WINSOK MOSFET

deskripsyon kout:

Nimewo Pati:WSD4018DN22

BVDSS:-40V

ID:-18A

RDSON:26mΩ 

Chèn:P-chanèl

Pake:DFN2X2-6L


Pwodwi detay

Aplikasyon

Tags pwodwi

Apèsi sou pwodwi WINSOK MOSFET

Vòltaj la nan WSD4018DN22 MOSFET se -40V, aktyèl la se -18A, rezistans a se 26mΩ, kanal la se P-chanèl, ak pake a se DFN2X2-6L.

WINSOK MOSFET zòn aplikasyon yo

Teknoloji avanse gwo dansite selil Trench, Super Low Gate Charge, ekselan Cdv/dt efè n bès Green Aparèy Disponib, MOSFET ekipman rekonesans figi, MOSFET e-sigarèt, MOSFET ti aparèy nan kay la, MOSFET plato machin.

WINSOK MOSFET koresponn ak lòt nimewo materyèl mak

AOS MOSFET AON2409,POTENS MOSFET PDB3909L

MOSFET paramèt

Senbòl

Paramèt

Rating

Inite yo

VDS

Drenaj-Sous Voltage

-40

V

VGS

Gate-Sous Voltage

± 20

V

ID@Tc= 25 ℃

Kouran drenaj kontinyèl, VGS@-10V1

-18

A

ID@Tc= 70 ℃

Kouran drenaj kontinyèl, VGS@-10V1

-14.6

A

IDM

300μS enpulsyonèl drenaj aktyèl, VGS=-4.5V2

54

A

PD@Tc= 25 ℃

Dissipasyon pouvwa total3

19

W

TSTG

Ranje Tanperati Depo

-55 a 150

TJ

Operasyon Junction Tanperati Range

-55 a 150

Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)

Senbòl

Paramèt

Kondisyon yo

Min.

Typ.

Max.

Inite

BVDSS

Drenaj-Sous Pann Voltage VGS=0V, mwenD=-250uA

-40

---

---

V

△BVDSS/△TJ

Koefisyan Tanperati BVDSS Referans a 25℃, ID=-1mA

---

-0.01

---

V/℃

RDS(ON)

Estatik drenaj-sous sou-rezistans2 VGS=-10V, mwenD=-8.0A

---

26

34

VGS=-4.5V, mwenD=-6.0A

---

31

42

VGS(th)

Pòtay Limit Voltage VGS=VDS, mwenD=-250uA

-1.0

-1.5

-3.0

V

△VGS(th)

VGS(th)Koefisyan Tanperati

---

3.13

---

mV/℃

IDSS

Kouran Drenaj-Sous Flit VDS=-40V, VGS=0V, TJ= 25 ℃

---

---

-1

uA

VDS=-40V, VGS=0V, TJ= 55 ℃

---

---

-5

IGSS

Gate-Source Leakage Current VGS=±20V, VDS= 0V

---

---

± 100

nA

Qg

Total chaj pòtay (-4.5V) VDS=-20V, VGS=-10V, mwenD=-1.5A

---

27

---

nC

Qgs

Gate-Sous Charge

---

2.5

---

Qgd

Gate-Drenaj chaj

---

6.7

---

Td(sou)

Tan delè vire-sou VDD=-20V, VGS=-10V,RG=3Ω, RL=10Ω

---

9.8

---

ns

Tr

Leve tan

---

11

---

Td (off)

Tan delè pou fèmen

---

54

---

Tf

Tan Otòn

---

7.1

---

Ciss

Antre kapasite VDS=-20V, VGS=0V, f=1MHz

---

1560

---

pF

Coss

Sòti kapasite

---

116

---

Crss

Ranvèse kapasite transfè

---

97

---


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