WSD4018DN22 P-chanèl -40V -18A DFN2X2-6L WINSOK MOSFET

WSD4018DN22 P-chanèl -40V -18A DFN2X2-6L WINSOK MOSFET

deskripsyon kout:

Nimewo Pati:WSD4018DN22

BVDSS:-40V

ID:-18A

RDSON:26mΩ 

Chèn:P-chanèl

Pake:DFN2X2-6L


Pwodwi detay

Aplikasyon

Tags pwodwi

Apèsi sou pwodwi WINSOK MOSFET

Vòltaj la nan WSD4018DN22 MOSFET se -40V, aktyèl la se -18A, rezistans a se 26mΩ, kanal la se P-chanèl, ak pake a se DFN2X2-6L.

WINSOK MOSFET zòn aplikasyon yo

Teknoloji avanse gwo dansite selil Trench, Super Low Gate Charge, ekselan Cdv/dt efè n bès Green Aparèy Disponib, MOSFET ekipman rekonesans figi, MOSFET e-sigarèt, ti aparèy nan kay la MOSFET, MOSFET plato machin.

WINSOK MOSFET koresponn ak lòt nimewo materyèl mak

AOS MOSFET AON2409,POTENS MOSFET PDB3909L

MOSFET paramèt

Senbòl

Paramèt

Rating

Inite yo

VDS

Drenaj-Sous Voltage

-40

V

VGS

Gate-Sous Voltage

± 20

V

ID@Tc= 25 ℃

Kouran drenaj kontinyèl, VGS@-10V1

-18

A

ID@Tc= 70 ℃

Kouran drenaj kontinyèl, VGS@-10V1

-14.6

A

IDM

300μS enpulsyonèl drenaj aktyèl, VGS=-4.5V2

54

A

PD@Tc= 25 ℃

Dissipasyon pouvwa total3

19

W

TSTG

Ranje Tanperati Depo

-55 a 150

TJ

Operasyon Junction Tanperati Range

-55 a 150

Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)

Senbòl

Paramèt

Kondisyon yo

Min.

Typ.

Max.

Inite

BVDSS

Drenaj-Sous Pann Voltage VGS=0V, mwenD=-250uA

-40

---

---

V

△BVDSS/△TJ

Koefisyan Tanperati BVDSS Referans a 25℃, ID=-1mA

---

-0.01

---

V/℃

RDS(ON)

Estatik drenaj-sous sou-rezistans2 VGS=-10V, mwenD=-8.0A

---

26

34

VGS=-4.5V, mwenD=-6.0A

---

31

42

VGS(th)

Pòtay Limit Voltage VGS=VDS, mwenD=-250uA

-1.0

-1.5

-3.0

V

△VGS(th)

VGS(th)Koefisyan Tanperati

---

3.13

---

mV/℃

IDSS

Kouran Drenaj-Sous Flit VDS=-40V, VGS=0V, TJ= 25 ℃

---

---

-1

uA

VDS=-40V, VGS=0V, TJ= 55 ℃

---

---

-5

IGSS

Gate-Source Leakage Current VGS=±20V, VDS= 0V

---

---

± 100

nA

Qg

Total chaj pòtay (-4.5V) VDS=-20V, VGS=-10V, mwenD=-1.5A

---

27

---

nC

Qgs

Pòtay-Sous chaj

---

2.5

---

Qgd

Gate-Drenaj chaj

---

6.7

---

Td(sou)

Tan delè vire-sou VDD=-20V, VGS=-10V,RG=3Ω, RL=10Ω

---

9.8

---

ns

Tr

Leve tan

---

11

---

Td (off)

Tan delè pou fèmen

---

54

---

Tf

Tan Otòn

---

7.1

---

Ciss

Antre kapasite VDS=-20V, VGS=0V, f=1MHz

---

1560

---

pF

Coss

Sòti kapasite

---

116

---

Crss

Ranvèse kapasite transfè

---

97

---


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