WSD4076DN56 N-chanèl 40V 76A DFN5X6-8 WINSOK MOSFET

pwodwi yo

WSD4076DN56 N-chanèl 40V 76A DFN5X6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Pati:WSD4076DN56

BVDSS:40V

ID:76A

RDSON:6.9mΩ 

Chèn:N-chanèl

Pake:DFN5X6-8


Pwodwi detay

Aplikasyon

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Apèsi sou pwodwi WINSOK MOSFET

Vòltaj WSD4076DN56 MOSFET se 40V, aktyèl la se 76A, rezistans a se 6.9mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.

WINSOK MOSFET zòn aplikasyon yo

Ti aparèy MOSFET, aparèy pòtatif MOSFET, motè MOSFET.

WINSOK MOSFET koresponn ak lòt nimewo materyèl mak

STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.

PANJIT MOSFET PJQ5442.

POTENS Semiconductor MOSFET PDC496X.

MOSFET paramèt

Senbòl

Paramèt

Rating

Inite yo

VDS

Drenaj-Sous Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

Kouran drenaj kontinyèl, VGS@ 10V

76

A

ID@TC= 100

Kouran drenaj kontinyèl, VGS@ 10V

33

A

IDM

Kouran drenaj enpulsyonèla

125

A

EAS

Enèji lavalas batman kè sèlb

31

mJ

IAS

Kouran Lavalas

31

A

PD@Ta=25

Dissipasyon pouvwa total

1.7

W

TSTG

Ranje Tanperati Depo

-55 a 150

TJ

Operasyon Junction Tanperati Range

-55 a 150

 

Senbòl

Paramèt

Kondisyon

Min.

Typ.

Max.

Inite

BVDSS

Drenaj-Sous Pann Voltage VGS=0V, mwenD= 250uA

40

---

---

V

BVDSS/△TJ

BVDSSKoefisyan Tanperati Referans a 25, mwenD= 1mA

---

0.043

---

V/

RDS(ON)

Estatik drenaj-sous sou-rezistans2 VGS = 10V, mwenD= 12A

---

6.9

8.5

mΩ

RDS(ON)

Estatik drenaj-sous sou-rezistans2 VGS = 4.5V, mwenD= 10A

---

10

15

VGS(th)

Pòtay Limit Voltage VGS=VDS, mwenD= 250uA

1.5

1.6

2.5

V

VGS(th)

VGS(th)Koefisyan Tanperati

---

-6,94

---

mV/

IDSS

Kouran Drenaj-Sous Flit VDS=32V, VGS=0V, TJ=25

---

---

2

uA

VDS=32V, VGS=0V, TJ=55

---

---

10

IGSS

Gate-Source Leakage Current VGS=±20V, VDS= 0V

---

---

±100

nA

gfs

Transkonduktans Avant VDS=5V, mwenD= 20A

---

18

---

S

Rg

Rezistans pòtay VDS= 0V, VGS=0V, f=1MHz

---

1.7

---

Ω

Qg

Chaj pòtay total (10V) VDS= 20V, VGS=4.5V, mwenD= 12A

---

5.8

---

nC

Qgs

Pòtay-Sous chaj

---

3.0

---

Qgd

Gate-Drenaj chaj

---

1.2

---

Td(sou)

Tan delè vire-sou VDD= 15V, VGEN= 10V, RG= 3.3Ω, mwenD= 1A .

---

12

---

ns

Tr

Leve tan

---

5.6

---

Td (off)

Tan delè pou fèmen

---

20

---

Tf

Tan Otòn

---

11

---

Ciss

Antre kapasite VDS= 15V, VGS=0V, f=1MHz

---

680

---

pF

Coss

Sòti kapasite

---

185

---

Crss

Ranvèse kapasite transfè

---

38

---


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