WSD4280DN22 Doub P-chanèl -15V -4.6A DFN2X2-6L WINSOK MOSFET

pwodwi yo

WSD4280DN22 Doub P-chanèl -15V -4.6A DFN2X2-6L WINSOK MOSFET

deskripsyon kout:

Nimewo Pati:WSD4280DN22

BVDSS:-15V

ID:-4.6A

RDSON:47mΩ 

Chèn:Doub P-chanèl

Pake:DFN2X2-6L


Pwodwi detay

Aplikasyon

Tags pwodwi

Apèsi sou pwodwi WINSOK MOSFET

Vòltaj la nan WSD4280DN22 MOSFET se -15V, aktyèl la se -4.6A, rezistans a se 47mΩ, kanal la se Doub P-chanèl, ak pake a se DFN2X2-6L.

WINSOK MOSFET zòn aplikasyon yo

Bidirectional bloke switch; DC-DC aplikasyon pou konvèsyon; Li-batri chaje; E-sigarèt MOSFET, MOSFET chaje san fil, MOSFET chaje machin, MOSFET kontwolè, MOSFET pwodwi dijital, MOSFET ti aparèy nan kay la, MOSFET elektwonik konsomatè.

WINSOK MOSFET koresponn ak lòt nimewo materyèl mak

PANJIT MOSFET PJQ2815

MOSFET paramèt

Senbòl

Paramèt

Rating

Inite yo

VDS

Drenaj-Sous Voltage

-15

V

VGS

Gate-Sous Voltage

±8

V

ID@Tc= 25 ℃

Kouran drenaj kontinyèl, VGS= -4.5V1 

-4.6

A

IDM

300μS enpulsyonèl drenaj aktyèl, (VGS=-4.5V)

-15

A

PD 

Dissipasyon pouvwa Derating pi wo a TA = 25°C (Nòt 2)

1.9

W

TSTG,TJ 

Ranje Tanperati Depo

-55 a 150

RθJA

Rezistans tèmik Junction-anbyen1

65

℃/W

RθJC

Rezistans tèmik Junction-Ka1

50

℃/W

Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)

Senbòl

Paramèt

Kondisyon yo

Min.

Typ.

Max.

Inite

BVDSS 

Drenaj-Sous Pann Voltage VGS=0V, mwenD=-250uA

-15

---

---

V

△BVDSS/△TJ

Koefisyan Tanperati BVDSS Referans a 25℃, ID=-1mA

---

-0.01

---

V/℃

RDS(ON)

Estatik drenaj-sous sou-rezistans2  VGS=-4.5V, mwenD=-1A

---

47

61

VGS=-2.5V, mwenD=-1A

---

61

80

VGS=-1.8V, mwenD=-1A

---

90

150

VGS(th)

Pòtay Limit Voltage VGS=VDS, mwenD=-250uA

-0.4

-0.62

-1.2

V

△VGS(th) 

VGS(th)Koefisyan Tanperati

---

3.13

---

mV/℃

IDSS

Kouran Drenaj-Sous Flit VDS=-10V, VGS=0V, TJ= 25 ℃

---

---

-1

uA

VDS=-10V, VGS=0V, TJ= 55 ℃

---

---

-5

IGSS

Gate-Source Leakage Current VGS=±12V, VDS= 0V

---

---

± 100

nA

gfs

Transkonduktans Avant VDS=-5V, mwenD=-1A

---

10

---

S

Rg 

Rezistans pòtay VDS= 0V, VGS=0V, f=1MHz

---

2

---

Ω

Qg 

Total chaj pòtay (-4.5V)

VDS=-10V, VGS=-4.5V, mwenD=-4.6A

---

9.5

---

nC

Qgs 

Gate-Sous Charge

---

1.4

---

Qgd 

Gate-Drenaj chaj

---

2.3

---

Td(sou)

Tan delè vire-sou VDD=-10V,VGS=-4.5V, RG= 1Ω

ID=-3.9A,

---

15

---

ns

Tr 

Leve tan

---

16

---

Td (off)

Tan delè pou fèmen

---

30

---

Tf 

Tan Otòn

---

10

---

Ciss 

Antre kapasite VDS=-10V, VGS=0V, f=1MHz

---

781

---

pF

Coss

Sòti kapasite

---

98

---

Crss 

Ranvèse kapasite transfè

---

96

---


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