WSD45N10GDN56 N-chanèl 100V 45A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD45N10GDN56 MOSFET se 100V, aktyèl la se 45A, rezistans a se 14.5mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
E-sigarèt MOSFET, san fil chaje MOSFET, motè MOSFET, dron MOSFET, swen medikal MOSFET, chajè machin MOSFET, contrôleur MOSFET, pwodwi dijital MOSFET, ti aparèy nan kay la MOSFET, konsomatè elektwonik MOSFET.
WINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS@ 10V | 45 | A |
| ID@TC= 100℃ | Kouran drenaj kontinyèl, VGS@ 10V | 33 | A |
| ID@TA=25℃ | Kouran drenaj kontinyèl, VGS@ 10V | 12 | A |
| ID@TA=70℃ | Kouran drenaj kontinyèl, VGS@ 10V | 9.6 | A |
| IDMa | Kouran drenaj enpulsyonèl | 130 | A |
| EASb | Enèji lavalas batman kè sèl | 169 | mJ |
| IASb | Kouran Lavalas | 26 | A |
| PD@TC=25℃ | Dissipasyon pouvwa total | 95 | W |
| PD@TA=25℃ | Dissipasyon pouvwa total | 5.0 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25℃, mwenD= 1mA | --- | 0.0 | --- | V/℃ |
| RDS(ON)d | Estatik drenaj-sous sou-rezistans2 | VGS= 10V, mwenD= 26A | --- | 14.5 | 17.5 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koefisyan Tanperati | --- | -5 | mV/℃ | ||
| IDSS | Kouran Drenaj-Sous Flit | VDS= 80V, VGS=0V, TJ=25℃ | --- | - | 1 | uA |
| VDS= 80V, VGS=0V, TJ=55℃ | --- | - | 30 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS= 0V | --- | - | ±100 | nA |
| Rge | Rezistans pòtay | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Chaj pòtay total (10V) | VDS= 50V, VGS= 10V, mwenD= 26A | --- | 42 | 59 | nC |
| Qgse | Pòtay-Sous chaj | --- | 12 | -- | ||
| Qgde | Gate-Drenaj chaj | --- | 12 | --- | ||
| Td(sou)e | Tan delè vire-sou | VDD= 30V, VGEN= 10V, RG=6Ω ID=1A,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Leve tan | --- | 9 | 17 | ||
| Td (off)e | Tan delè pou fèmen | --- | 36 | 65 | ||
| Tfe | Tan Otòn | --- | 22 | 40 | ||
| Cisse | Antre kapasite | VDS= 30V, VGS=0V, f=1MHz | --- | 1800 | --- | pF |
| Cosse | Sòti kapasite | --- | 215 | --- | ||
| Crsse | Ranvèse kapasite transfè | --- | 42 | --- |
