WSD60N10GDN56 N-chanèl 100V 60A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD60N10GDN56 MOSFET se 100V, aktyèl la se 60A, rezistans a se 8.5mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
E-sigarèt MOSFET, san fil chaje MOSFET, motè MOSFET, dron MOSFET, swen medikal MOSFET, chajè machin MOSFET, contrôleur MOSFET, pwodwi dijital MOSFET, ti aparèy nan kay la MOSFET, konsomatè elektwonik MOSFET.
MOSFET aplikasyon fieldsWINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINEON,IRTOSPHANSFET3,IRTOSPHANSFET3, MOSFET NTMFS6B14N.VISHAY MOSFET 8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 100 | V |
| VGS | Gate-Sous Voltage | ± 20 | V |
| ID@TC= 25 ℃ | Kouran drenaj kontinyèl | 60 | A |
| IDP | Kouran drenaj enpulsyonèl | 210 | A |
| EAS | Enèji lavalas, batman kè sèl | 100 | mJ |
| PD@TC= 25 ℃ | Dissipasyon pouvwa total | 125 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 100 | --- | --- | V |
| Estatik drenaj-sous sou-rezistans | VGS = 10V, ID = 10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS = 4.5V, ID = 10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 1.0 | --- | 2.5 | V |
| IDSS | Kouran Drenaj-Sous Flit | VDS= 80V, VGS=0V, TJ= 25 ℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS= 0V | --- | --- | ± 100 | nA |
| Qg | Chaj pòtay total (10V) | VDS= 50V, VGS=10V, mwenD= 25A | --- | 49.9 | --- | nC |
| Qgs | Pòtay-Sous chaj | --- | 6.5 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 12.4 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD= 50V, VGS= 10V,RG= 2.2Ω, mwenD= 25A | --- | 20.6 | --- | ns |
| Tr | Leve tan | --- | 5 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 51.8 | --- | ||
| Tf | Tan Otòn | --- | 9 | --- | ||
| Ciss | Antre kapasite | VDS= 50V, VGS=0V, f=1MHz | --- | 2604 | --- | pF |
| Coss | Sòti kapasite | --- | 362 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 6.5 | --- | ||
| IS | Kontinyèl Sous Kouran | VG=VD= 0V , Fòs aktyèl | --- | --- | 60 | A |
| ISP | Enpulsyon Sous Kouran | --- | --- | 210 | A | |
| VSD | Dyòd Avant Voltage | VGS=0V, mwenS=12A, TJ= 25 ℃ | --- | --- | 1.3 | V |
| trr | Tan Rekiperasyon Ranvèse | SI=12A,dI/dt=100A/µs,TJ= 25 ℃ | --- | 60.4 | --- | nS |
| Qrr | Ranvèse chaj rekiperasyon | --- | 106.1 | --- | nC |
