WSD60N12GDN56 N-chanèl 120V 70A DFN5X6-8 WINSOK MOSFET

pwodwi yo

WSD60N12GDN56 N-chanèl 120V 70A DFN5X6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Pati:WSD60N12GDN56

BVDSS:120V

ID:70A

RDSON:10mΩ

Chèn:N-chanèl

Pake:DFN5X6-8


Pwodwi detay

Aplikasyon

Tags pwodwi

Apèsi sou pwodwi WINSOK MOSFET

Vòltaj la nan WSD60N12GDN56 MOSFET se 120V, aktyèl la se 70A, rezistans a se 10mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.

WINSOK MOSFET zòn aplikasyon yo

Ekipman medikal MOSFET, dron MOSFET, PD ekipman pou pouvwa MOSFET, ki ap dirije ekipman pou MOSFET, ekipman endistriyèl MOSFET.

MOSFET aplikasyon fieldsWINSOK MOSFET koresponn ak lòt nimewo materyèl mak

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.

MOSFET paramèt

Senbòl

Paramèt

Rating

Inite yo

VDS

Drenaj-Sous Voltage

120

V

VGS

Gate-Sous Voltage

± 20

V

ID@TC= 25 ℃

Kouran drenaj kontinyèl

70

A

IDP

Kouran drenaj enpulsyonèl

150

A

EAS

Enèji lavalas, batman kè sèl

53.8

mJ

PD@TC= 25 ℃

Dissipasyon pouvwa total

140

W

TSTG

Ranje Tanperati Depo

-55 a 150

TJ 

Operasyon Junction Tanperati Range

-55 a 150

 

Senbòl

Paramèt

Kondisyon yo

Min.

Typ.

Max.

Inite

BVDSS 

Drenaj-Sous Pann Voltage VGS=0V, mwenD= 250uA

120

---

---

V

  Estatik drenaj-sous sou-rezistans VGS = 10V, ID = 10A.

---

10

15

RDS(ON)

VGS = 4.5V, ID = 10A.

---

18

25

VGS(th)

Pòtay Limit Voltage VGS=VDS, mwenD= 250uA

1.2

---

2.5

V

IDSS

Kouran Drenaj-Sous Flit VDS= 80V, VGS=0V, TJ= 25 ℃

---

---

1

uA

IGSS

Gate-Source Leakage Current VGS=±20V, VDS= 0V

---

---

± 100

nA

Qg 

Chaj pòtay total (10V) VDS= 50V, VGS= 10V, mwenD= 25A

---

33

---

nC

Qgs 

Gate-Sous Charge

---

5.6

---

Qgd 

Gate-Drenaj chaj

---

7.2

---

Td(sou)

Tan delè vire-sou VDD= 50V, VGS= 10V,

RG= 2Ω, mwenD= 25A

---

22

---

ns

Tr 

Leve tan

---

10

---

Td (off)

Tan delè pou fèmen

---

85

---

Tf 

Tan Otòn

---

112

---

Ciss 

Antre kapasite VDS= 50V, VGS=0V, f=1MHz

---

2640

---

pF

Coss

Sòti kapasite

---

330

---

Crss 

Ranvèse kapasite transfè

---

11

---

IS 

Kontinyèl Sous Kouran VG=VD= 0V , Fòs aktyèl

---

---

50

A

ISP

Enpulsyon Sous Kouran

---

---

150

A

VSD

Dyòd Avant Voltage VGS=0V, mwenS=12A, TJ= 25 ℃

---

---

1.3

V

trr 

Tan Rekiperasyon Ranvèse SI=25A,dI/dt=100A/µs,TJ= 25 ℃

---

62

---

nS

Qrr 

Ranvèse chaj rekiperasyon

---

135

---

nC

 


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