WSD60N12GDN56 N-chanèl 120V 70A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD60N12GDN56 MOSFET se 120V, aktyèl la se 70A, rezistans a se 10mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
Ekipman medikal MOSFET, dron MOSFET, PD ekipman pou pouvwa MOSFET, ki ap dirije ekipman pou MOSFET, ekipman endistriyèl MOSFET.
MOSFET aplikasyon fieldsWINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 120 | V |
| VGS | Gate-Sous Voltage | ± 20 | V |
| ID@TC= 25 ℃ | Kouran drenaj kontinyèl | 70 | A |
| IDP | Kouran drenaj enpulsyonèl | 150 | A |
| EAS | Enèji lavalas, batman kè sèl | 53.8 | mJ |
| PD@TC= 25 ℃ | Dissipasyon pouvwa total | 140 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 120 | --- | --- | V |
| Estatik drenaj-sous sou-rezistans | VGS = 10V, ID = 10A. | --- | 10 | 15 | mΩ | |
| RDS(ON) | VGS = 4.5V, ID = 10A. | --- | 18 | 25 | mΩ | |
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 1.2 | --- | 2.5 | V |
| IDSS | Kouran Drenaj-Sous Flit | VDS= 80V, VGS=0V, TJ= 25 ℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS= 0V | --- | --- | ± 100 | nA |
| Qg | Chaj pòtay total (10V) | VDS= 50V, VGS=10V, mwenD= 25A | --- | 33 | --- | nC |
| Qgs | Pòtay-Sous chaj | --- | 5.6 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 7.2 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD= 50V, VGS= 10V, RG= 2Ω, mwenD= 25A | --- | 22 | --- | ns |
| Tr | Leve tan | --- | 10 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 85 | --- | ||
| Tf | Tan Otòn | --- | 112 | --- | ||
| Ciss | Antre kapasite | VDS= 50V, VGS=0V, f=1MHz | --- | 2640 | --- | pF |
| Coss | Sòti kapasite | --- | 330 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 11 | --- | ||
| IS | Kontinyèl Sous Kouran | VG=VD= 0V , Fòs aktyèl | --- | --- | 50 | A |
| ISP | Enpulsyon Sous Kouran | --- | --- | 150 | A | |
| VSD | Dyòd Avant Voltage | VGS=0V, mwenS=12A, TJ= 25 ℃ | --- | --- | 1.3 | V |
| trr | Tan Rekiperasyon Ranvèse | SI=25A,dI/dt=100A/µs,TJ= 25 ℃ | --- | 62 | --- | nS |
| Qrr | Ranvèse chaj rekiperasyon | --- | 135 | --- | nC |
