WSD75100DN56 N-chanèl 75V 100A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD75100DN56 MOSFET se 75V, aktyèl la se 100A, rezistans a se 5.3mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
E-sigarèt MOSFET, san fil chaje MOSFET, dron MOSFET, swen medikal MOSFET, chajè machin MOSFET, contrôleur MOSFET, pwodwi dijital MOSFET, ti aparèy nan kay la MOSFET, konsomatè elektwonik MOSFET.
WINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS36N7 .
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 75 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| TJ | Maksimòm Tanperati Junction | 150 | °C |
| ID | Ranje Tanperati Depo | -55 a 150 | °C |
| IS | Dyòd kontinyèl Avant aktyèl, TC= 25°C | 50 | A |
| ID | Kouran drenaj kontinyèl, VGS= 10V,TC= 25°C | 100 | A |
| Kouran drenaj kontinyèl, VGS= 10V,TC= 100 °C | 73 | A | |
| IDM | Enpulsyonèl Kouran Drenaj, TC= 25°C | 400 | A |
| PD | Dissipasyon pouvwa maksimòm, TC= 25°C | 155 | W |
| Dissipasyon pouvwa maksimòm, TC= 100 °C | 62 | W | |
| RθJA | Rezistans tèmik-Junction nan anbyen ,t =10s ̀ | 20 | °C |
| Rezistans tèmik-Junction nan anbyen, eta fiks | 60 | °C | |
| RqJC | Rezistans tèmik-Junction nan ka | 0.8 | °C |
| IAS | Kouran lavalas, batman kè sèl, L = 0.5mH | 30 | A |
| EAS | Enèji lavalas, batman kè sèl, L = 0.5mH | 225 | mJ |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoefisyan Tanperati | Referans a 25℃, mwenD= 1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS = 10V, mwenD= 25A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koefisyan Tanperati | --- | -6,94 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Transkonduktans Avant | VDS=5V, mwenD= 20A | --- | 50 | --- | S |
| Rg | Rezistans pòtay | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Chaj pòtay total (10V) | VDS= 20V, VGS= 10V, mwenD= 40A | --- | 65 | 85 | nC |
| Qgs | Gate-Sous Charge | --- | 20 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 17 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD= 30V, VGEN= 10V, RG=1Ω, mwenD=1A,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Leve tan | --- | 14 | 26 | ||
| Td (off) | Tan delè pou fèmen | --- | 60 | 108 | ||
| Tf | Tan Otòn | --- | 37 | 67 | ||
| Ciss | Antre kapasite | VDS= 20V, VGS=0V, f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Sòti kapasite | 245 | 395 | 652 | ||
| Crss | Ranvèse kapasite transfè | 100 | 195 | 250 |
