WSD80100DN56 N-chanèl 80V 100A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD80100DN56 MOSFET se 80V, aktyèl la se 100A, rezistans a se 6.1mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
Drones MOSFET, motè MOSFET, otomobil elektwonik MOSFET, gwo aparèy MOSFET.
WINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 80 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| TJ | Maksimòm Tanperati Junction | 150 | °C |
| ID | Ranje Tanperati Depo | -55 a 150 | °C |
| ID | Kouran drenaj kontinyèl, VGS= 10V,TC= 25°C | 100 | A |
| Kouran drenaj kontinyèl, VGS= 10V,TC= 100 °C | 80 | A | |
| IDM | Enpulsyonèl Kouran Drenaj, TC= 25°C | 380 | A |
| PD | Dissipasyon pouvwa maksimòm, TC= 25°C | 200 | W |
| RqJC | Rezistans tèmik-Junction nan ka | 0.8 | °C |
| EAS | Enèji lavalas, batman kè sèl, L = 0.5mH | 800 | mJ |
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoefisyan Tanperati | Referans a 25℃, mwenD= 1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans2 | VGS = 10V, mwenD= 40A | --- | 6.1 | 8.5 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koefisyan Tanperati | --- | -6,94 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Transkonduktans Avant | VDS=5V, mwenD= 20A | 80 | --- | --- | S |
| Qg | Chaj pòtay total (10V) | VDS= 30V, VGS= 10V, mwenD= 30A | --- | 125 | --- | nC |
| Qgs | Pòtay-Sous chaj | --- | 24 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 30 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD= 30V, VGS= 10V, RG= 2.5Ω, mwenD=2A,RL=15Ω. | --- | 20 | --- | ns |
| Tr | Leve tan | --- | 19 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 70 | --- | ||
| Tf | Tan Otòn | --- | 30 | --- | ||
| Ciss | Antre kapasite | VDS= 25V, VGS=0V, f=1MHz | --- | 4900 | --- | pF |
| Coss | Sòti kapasite | --- | 410 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 315 | --- |
