WSD80120DN56 N-chanèl 85V 120A DFN5X6-8 WINSOK MOSFET
Apèsi sou pwodwi WINSOK MOSFET
Vòltaj la nan WSD80120DN56 MOSFET se 85V, aktyèl la se 120A, rezistans a se 3.7mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.
WINSOK MOSFET zòn aplikasyon yo
MOSFET vòltaj medikal, MOSFET ekipman fotografi, dron MOSFET, MOSFET kontwòl endistriyèl, 5G MOSFET, MOSFET elektwonik otomobil.
WINSOK MOSFET koresponn ak lòt nimewo materyèl mak
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.
MOSFET paramèt
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 85 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS@ 10V | 120 | A |
| ID@TC= 100℃ | Kouran drenaj kontinyèl, VGS@ 10V | 96 | A |
| IDM | Kouran drenaj enpulsyonèl..TC= 25°C | 384 | A |
| EAS | Enèji lavalas, batman kè sèl, L = 0.5mH | 320 | mJ |
| IAS | Kouran lavalas, batman kè sèl, L = 0.5mH | 180 | A |
| PD@TC=25℃ | Dissipasyon pouvwa total | 104 | W |
| PD@TC= 100℃ | Dissipasyon pouvwa total | 53 | W |
| TSTG | Ranje Tanperati Depo | -55 a 175 | ℃ |
| TJ | Operasyon Junction Tanperati Range | 175 | ℃ |
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS=0V, mwenD= 250uA | 85 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoefisyan Tanperati | Referans a 25℃, mwenD= 1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans | VGS= 10V,ID= 50A | --- | 3.7 | 4.8 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS=VDS, mwenD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koefisyan Tanperati | --- | -5.5 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=85V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±25V, VDS= 0V | --- | --- | ±100 | nA |
| Rg | Rezistans pòtay | VDS= 0V, VGS=0V, f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Chaj pòtay total (10V) | VDS= 50V, VGS= 10V, mwenD= 10A | --- | 54 | --- | nC |
| Qgs | Pòtay-Sous chaj | --- | 17 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 11 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD= 50V, VGS= 10V, RG=1Ω,RL=1Ω,IDS=10A. | --- | 21 | --- | ns |
| Tr | Leve tan | --- | 18 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 36 | --- | ||
| Tf | Tan Otòn | --- | 10 | --- | ||
| Ciss | Antre kapasite | VDS=40V, VGS=0V, f=1MHz | --- | 3750 | --- | pF |
| Coss | Sòti kapasite | --- | 395 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 180 | --- |
