WSD80130DN56 N-chanèl 80V 130A DFN5X6-8 WINSOK MOSFET

pwodwi yo

WSD80130DN56 N-chanèl 80V 130A DFN5X6-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Pati:WSD80130DN56

BVDSS:80V

ID:130A

RDSON:2.7mΩ

Chèn:N-chanèl

Pake:DFN5X6-8


Pwodwi detay

Aplikasyon

Tags pwodwi

Apèsi sou pwodwi WINSOK MOSFET

Vòltaj la nan WSD80130DN56 MOSFET se 80V, aktyèl la se 130A, rezistans a se 2.7mΩ, kanal la se N-chanèl, ak pake a se DFN5X6-8.

WINSOK MOSFET zòn aplikasyon yo

Drones MOSFET, motè MOSFET, medikal MOSFET, zouti pouvwa MOSFET, ESCs MOSFET.

WINSOK MOSFET koresponn ak lòt nimewo materyèl mak

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.

MOSFET paramèt

Senbòl

Paramèt

Rating

Inite yo

VDS

Drenaj-Sous Voltage

80

V

VGS

Gate-Source Voltage

±20

V

TJ

Maksimòm Tanperati Junction

150

°C

ID

Ranje Tanperati Depo

-55 a 150

°C

ID

Kouran drenaj kontinyèl, VGS= 10V,TC= 25°C

130

A

Kouran drenaj kontinyèl, VGS= 10V,TC= 70°C

89

A

IDM

Enpulsyonèl Kouran Drenaj, TC= 25°C

400

A

PD

Dissipasyon pouvwa maksimòm, TC= 25°C

200

W

RqJC

Rezistans tèmik-Junction nan ka

1.25

°C

       

 

Senbòl

Paramèt

Kondisyon yo

Min.

Typ.

Max.

Inite

BVDSS

Drenaj-Sous Pann Voltage VGS=0V, mwenD= 250uA

80

---

---

V

BVDSS/△TJ

BVDSSKoefisyan Tanperati Referans a 25, mwenD= 1mA

---

0.043

---

V/

RDS(ON)

Estatik drenaj-sous sou-rezistans2 VGS = 10V, mwenD= 40A

---

2.7

3.6

mΩ

VGS(th)

Pòtay Limit Voltage VGS=VDS, mwenD= 250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Koefisyan Tanperati

---

-6,94

---

mV/

IDSS

Kouran Drenaj-Sous Flit VDS=48V, VGS=0V, TJ=25

---

---

2

uA

VDS=48V, VGS=0V, TJ=55

---

---

10

IGSS

Gate-Source Leakage Current VGS=±20V, VDS= 0V

---

---

±100

nA

Qg

Chaj pòtay total (10V) VDS= 30V, VGS= 10V, mwenD= 30A

---

48.6

---

nC

Qgs

Gate-Sous Charge

---

17.5

---

Qgd

Gate-Drenaj chaj

---

10.4

---

Td(sou)

Tan delè vire-sou VDD= 30V, VGS= 10V,

RG= 2.5Ω, mwenD=2A,RL=15Ω.

---

20

---

ns

Tr

Leve tan

---

10

---

Td (off)

Tan delè pou fèmen

---

35

---

Tf

Tan Otòn

---

12

---

Ciss

Antre kapasite VDS= 25V, VGS=0V, f=1MHz

---

4150

---

pF

Coss

Sòti kapasite

---

471

---

Crss

Ranvèse kapasite transfè

---

20

---


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