WSF6012 N&P-Chanèl 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSF6012

BVDSS:60V/-60V

RDSON:28mΩ/75mΩ

ID:20A/-15A

Chèn:N&P-Chanèl

Pake:TO-252-4L

Pwodwi pandan ete:WSF6012 MOSFET a gen yon seri vòltaj nan 60V ak -60V, ka okipe kouran jiska 20A ak -15A, gen yon rezistans nan 28mΩ ak 75mΩ, prezante tou de N&P-Chanèl, epi li pake nan TO-252-4L.

Aplikasyon:E-sigarèt, chajè san fil, motè, sovgad pouvwa, dron, swen sante, chajè machin, contrôleur, elektwonik, aparèy, ak machandiz konsomatè.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSF6012 MOSFET a se yon aparèy pèfòmans segondè ak yon konsepsyon dansite selil segondè.Li bay ekselan RDSON ak chaj pòtay apwopriye pou pifò aplikasyon pou konvètisè buck synchrone.Anplis de sa, li satisfè kondisyon RoHS ak Green Product, epi li vini ak 100% garanti EAS pou fonksyonalite konplè ak fyab.

Karakteristik

Teknoloji Trench avanse ak dansite selil segondè, chaj super ba Gate, ekselan CdV/dt efè bès, 100% garanti EAS, ak opsyon aparèy ki zanmitay anviwònman an.

Aplikasyon

Gwo Frekans Point-of-Chaj Synchrone Buck Converter, Networking DC-DC Power System, Chaj switch, E-sigarèt, chaje san fil, motè, ekipman pou ijans pouvwa, dron, swen sante, chajè machin, contrôleur, aparèy dijital, ti aparèy kay, ak elektwonik konsomatè.

nimewo materyèl ki koresponn lan

AOS AOD603A,

Paramèt enpòtan

Senbòl	Paramèt	Rating		Inite yo
Senbòl	Paramèt	N-chanèl	P-chanèl	Inite yo
VDS	Drenaj-Sous Voltage	60	-60	V
VGS	Gate-Sous Voltage	± 20	± 20	V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ 10V1	20	-15	A
ID@TC=70℃	Kouran drenaj kontinyèl, VGS @ 10V1	15	-10	A
IDM	Kouran drenaj enpulsyonèl2	46	-36	A
EAS	Single Pulse Lavalas Enèji3	200	180	mJ
IAS	Kouran Lavalas	59	-50	A
PD@TC=25℃	Dissipasyon pouvwa total4	34.7	34.7	W
TSTG	Ranje Tanperati Depo	-55 a 150	-55 a 150	℃
TJ	Operasyon Junction Tanperati Range	-55 a 150	-55 a 150	℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250uA	60	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = 1mA	---	0.063	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 10V, ID = 8A	---	28	37	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 4.5V, ID = 5A	---	37	45	mΩ
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID = 250uA	1	---	2.5	V
△VGS(th)	VGS(th) Koefisyan Tanperati	VGS = VDS, ID = 250uA	---	-5.24	---	mV/℃
IDSS	Kouran Drenaj-Sous Flit	VDS=48V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit	VDS=48V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS = 5V, ID = 8A	---	21	---	S
Rg	Rezistans pòtay	VDS=0V, VGS=0V, f=1MHz	---	3.0	4.5	Ω
Qg	Chaj pòtay total (4.5V)	VDS=48V, VGS=4.5V, ID=8A	---	12.6	20	nC
Qgs	Pòtay-Sous chaj		---	3.5	---
Qgd	Gate-Drenaj chaj		---	6.3	---
Td(sou)	Tan delè vire-sou	VDD = 30V, VGS = 4.5V, RG = 3.3Ω, ID = 1A	---	8	---	ns
Tr	Leve tan		---	14.2	---
Td (off)	Tan delè pou fèmen		---	24.6	---
Tf	Tan Otòn		---	4.6	---
Ciss	Antre kapasite	VDS=15V, VGS=0V, f=1MHz	---	670	---	pF
Coss	Sòti kapasite		---	70	---
Crss	Ranvèse kapasite transfè		---	35	---