WSF6012 N&P-Chanèl 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET
Deskripsyon jeneral
WSF6012 MOSFET a se yon aparèy pèfòmans segondè ak yon konsepsyon dansite selil segondè. Li bay ekselan RDSON ak chaj pòtay apwopriye pou pifò aplikasyon pou konvètisè buck synchrone. Anplis de sa, li satisfè kondisyon RoHS ak Green Product, epi li vini ak 100% garanti EAS pou fonksyonalite konplè ak fyab.
Karakteristik
Teknoloji Trench avanse ak dansite selil segondè, chaj super ba Gate, ekselan CdV/dt bès efè, 100% garanti EAS, ak opsyon aparèy ki zanmitay anviwònman an.
Aplikasyon
Gwo Frekans Point-of-Chaj Synchrone Buck Converter, Networking DC-DC Power System, Chaj switch, E-sigarèt, chaje san fil, motè, ekipman pou ijans pouvwa, dron, swen sante, chajè machin, contrôleur, aparèy dijital, ti aparèy kay, ak elektwonik konsomatè.
nimewo materyèl ki koresponn lan
AOS AOD603A,
Paramèt enpòtan
Senbòl | Paramèt | Rating | Inite yo | |
N-chanèl | P-chanèl | |||
VDS | Drenaj-Sous Voltage | 60 | -60 | V |
VGS | Gate-Sous Voltage | ± 20 | ± 20 | V |
ID@TC=25℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 20 | -15 | A |
ID@TC=70℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 15 | -10 | A |
IDM | Kouran drenaj enpulsyonèl2 | 46 | -36 | A |
EAS | Single Pulse Lavalas Enèji3 | 200 | 180 | mJ |
IAS | Kouran Lavalas | 59 | -50 | A |
PD@TC=25℃ | Dissipasyon pouvwa total4 | 34.7 | 34.7 | W |
TSTG | Ranje Tanperati Depo | -55 a 150 | -55 a 150 | ℃ |
TJ | Operasyon Junction Tanperati Range | -55 a 150 | -55 a 150 | ℃ |
Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 60 | --- | --- | V |
△BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = 1mA | --- | 0.063 | --- | V/℃ |
RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS = 10V, ID = 8A | --- | 28 | 37 | mΩ |
VGS = 4.5V, ID = 5A | --- | 37 | 45 | |||
VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 1 | --- | 2.5 | V |
△VGS(th) | VGS(th) Koefisyan Tanperati | --- | -5.24 | --- | mV/℃ | |
IDSS | Kouran Drenaj-Sous Flit | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
gfs | Transkonduktans Avant | VDS = 5V, ID = 8A | --- | 21 | --- | S |
Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 3.0 | 4.5 | Ω |
Qg | Chaj pòtay total (4.5V) | VDS=48V, VGS=4.5V, ID=8A | --- | 12.6 | 20 | nC |
Qgs | Gate-Sous Charge | --- | 3.5 | --- | ||
Qgd | Gate-Drenaj chaj | --- | 6.3 | --- | ||
Td(sou) | Tan delè vire-sou | VDD = 30V, VGS = 4.5V, RG = 3.3Ω, ID = 1A | --- | 8 | --- | ns |
Tr | Leve tan | --- | 14.2 | --- | ||
Td (off) | Tan delè pou fèmen | --- | 24.6 | --- | ||
Tf | Tan Otòn | --- | 4.6 | --- | ||
Ciss | Antre kapasite | VDS=15V, VGS=0V, f=1MHz | --- | 670 | --- | pF |
Coss | Sòti kapasite | --- | 70 | --- | ||
Crss | Ranvèse kapasite transfè | --- | 35 | --- |