WSF70P02 P-chanèl -20V -70A TO-252 WINSOK MOSFET

WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET Imaj Prezantasyon

deskripsyon kout:

Nimewo Modèl:WSF70P02

BVDSS:-20V

RDSON:6.8mΩ

ID:-70A

Chèn:P-chanèl

Pake:TO-252

Pwodwi pandan ete:WSF70P02 MOSFET a gen yon vòltaj -20V, aktyèl -70A, rezistans nan 6.8mΩ, yon P-Chanèl, ak anbalaj TO-252.

Aplikasyon:E-sigarèt, chajè san fil, motè, sovgad pouvwa, dron, swen sante, chajè machin, contrôleur, elektwonik, aparèy, ak machandiz konsomatè.

Voye imèl ba nou PDF

Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSF70P02 MOSFET a se aparèy tranche P-chanèl ki gen gwo pèfòmans ak dansite selil segondè. Li ofri RDSON eksepsyonèl ak chaj pòtay pou pifò aplikasyon pou konvètisè buck synchrone. Aparèy la satisfè kondisyon RoHS ak Green Product, li se 100% EAS garanti, e li te apwouve pou fyab fonksyon konplè.

Karakteristik

Teknoloji Trench avanse ak dansite selil segondè, chaj pòtay ki ba anpil, rediksyon ekselan nan efè CdV/dt, yon garanti 100% EAS, ak opsyon pou aparèy zanmitay anviwònman an.

Aplikasyon

Segondè Frekans Point-of-Chaj Synchrone, Buck Converter pou MB/NB/UMPC/VGA, Rezo DC-DC Power System, Chajman Chanjman, E-sigarèt, chaje san fil, motè, ekipman pou ijans pouvwa, dron, swen medikal, chajè machin , contrôleur, pwodwi dijital, ti aparèy nan kay la, elektwonik konsomatè.

nimewo materyèl ki koresponn lan

AOS

Paramèt enpòtan

Senbòl	Paramèt	Rating		Inite yo
		10s	Eta Stable
VDS	Drenaj-Sous Voltage	-20		V
VGS	Gate-Sous Voltage	±12		V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ -10V1	-70		A
ID@TC=100℃	Kouran drenaj kontinyèl, VGS @ -10V1	-36		A
IDM	Kouran drenaj enpulsyonèl2	-200		A
EAS	Single Pulse Lavalas Enèji3	360		mJ
IAS	Kouran Lavalas	-55.4		A
PD@TC=25℃	Dissipasyon pouvwa total4	80		W
TSTG	Ranje Tanperati Depo	-55 a 150		℃
TJ	Operasyon Junction Tanperati Range	-55 a 150		℃

Senbòl	Paramèt	Kondisyon yo	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = -250uA	-20	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = -1mA	---	-0.018	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS=-4.5V, ID=-15A	---	6.8	9.0	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2					mΩ
		VGS = -2.5V, ID = -10A	---	8.2	11
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID =-250uA	-0.4	-0.6	-1.2	V
		VGS = VDS, ID =-250uA
△VGS(th)	VGS(th) Koefisyan Tanperati		---	2.94	---	mV/℃
IDSS	Kouran Drenaj-Sous Flit	VDS=-20V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit					uA
		VDS=-20V, VGS=0V, TJ=55℃	---	---	5
IGSS	Gate-Source Leakage Current	VGS=±12V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS=-5V, ID=-10A	---	45	---	S
Qg	Total chaj pòtay (-4.5V)	VDS=-15V, VGS=-4.5V, ID=-10A	---	63	---	nC
Qgs	Gate-Sous Charge		---	9.1	---
Qgd	Gate-Drenaj chaj		---	13	---
Td(sou)	Tan delè vire-sou	VDD=-10V, VGS=-4.5V, RG = 3.3Ω, ID = -10A	---	16	---	ns
Tr	Leve tan		---	77	---
Td (off)	Tan delè pou fèmen		---	195	---
Tf	Tan Otòn		---	186	---
Ciss	Antre kapasite	VDS=-10V, VGS=0V, f=1MHz	---	5783	---	pF
Coss	Sòti kapasite		---	520	---
Crss	Ranvèse kapasite transfè		---	445	---