WSM320N04G N-chanèl 40V 320A TOLL-8L WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSM320N04G

BVDSS:40V

RDSON:1.2mΩ

ID:320A

Chèn:N-chanèl

Pake:TOLL-8L

Pwodwi pandan ete:WSM320N04G MOSFET la gen yon vòltaj 40V, yon aktyèl 320A, yon rezistans nan 1.2mΩ, yon N-chanèl, ak yon pake TOLL-8L.

Aplikasyon:Sigarèt elektwonik, chaje san fil, dron, medikal, chaje machin, contrôleur, pwodwi dijital, ti aparèy nan kay la, elektwonik konsomatè.

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Pwodwi detay

Aplikasyon

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Deskripsyon jeneral

WSM320N04G a se yon MOSFET wo-pèfòmans ki sèvi ak yon konsepsyon tranche epi ki gen yon dansite selil trè wo.Li gen ekselan RDSON ak chaj pòtay epi li apwopriye pou pifò aplikasyon pou konvètisè Buck Synchrone.WSM320N04G a satisfè kondisyon RoHS ak Green Product epi li garanti li gen 100% EAS ak fyab fonksyon konplè.

Karakteristik

Teknoloji avanse dansite selil segondè Trench, pandan y ap tou prezante yon chaj pòtay ki ba pou pèfòmans optimal.Anplis de sa, li gen yon ekselan bès efè CdV/dt, yon garanti 100% EAS ak yon opsyon ekolojik-zanmi.

Aplikasyon

High Frequency Point-of-Load Synchrone Buck Converter, Networking DC-DC Power System, Power Tool Application, Elektwonik sigarèt, chaje san fil, dron, medikal, chaje machin, contrôleur, pwodwi dijital, ti aparèy nan kay la, ak elektwonik konsomatè.

Paramèt enpòtan

Senbòl	Paramèt	Rating	Inite yo
VDS	Drenaj-Sous Voltage	40	V
VGS	Gate-Sous Voltage	± 20	V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ 10V1,7	320	A
ID@TC=100℃	Kouran drenaj kontinyèl, VGS @ 10V1,7	192	A
IDM	Kouran drenaj enpulsyonèl2	900	A
EAS	Single Pulse Lavalas Enèji3	980	mJ
IAS	Kouran Lavalas	70	A
PD@TC=25℃	Dissipasyon pouvwa total4	250	W
TSTG	Ranje Tanperati Depo	-55 a 175	℃
TJ	Operasyon Junction Tanperati Range	-55 a 175	℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250uA	40	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = 1mA	---	0.050	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 10V, ID = 25A	---	1.2	1.5	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 4.5V, ID = 20A	---	1.7	2.5	mΩ
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID = 250uA	1.2	1.7	2.6	V
△VGS(th)	VGS(th) Koefisyan Tanperati	VGS = VDS, ID = 250uA	---	-6,94	---	mV/℃
IDSS	Kouran Drenaj-Sous Flit	VDS=40V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit	VDS=40V, VGS=0V, TJ=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS = 5V, ID = 50A	---	160	---	S
Rg	Rezistans pòtay	VDS=0V, VGS=0V, f=1MHz	---	1.0	---	Ω
Qg	Chaj pòtay total (10V)	VDS=20V, VGS=10V, ID=25A	---	130	---	nC
Qgs	Pòtay-Sous chaj		---	43	---
Qgd	Gate-Drenaj chaj		---	83	---
Td(sou)	Tan delè vire-sou	VDD=20V, VGEN=4.5V, RG=2.7Ω, ID=1A.	---	30	---	ns
Tr	Leve tan		---	115	---
Td (off)	Tan delè pou fèmen		---	95	---
Tf	Tan Otòn		---	80	---
Ciss	Antre kapasite	VDS=20V, VGS=0V, f=1MHz	---	8100	---	pF
Coss	Sòti kapasite		---	1200	---
Crss	Ranvèse kapasite transfè		---	800	---