WSM320N04G N-chanèl 40V 320A TOLL-8L WINSOK MOSFET
Deskripsyon jeneral
WSM320N04G a se yon MOSFET wo-pèfòmans ki sèvi ak yon konsepsyon tranche epi ki gen yon dansite selil trè wo. Li gen ekselan RDSON ak chaj pòtay epi li apwopriye pou pifò aplikasyon pou konvètisè Buck Synchrone. WSM320N04G a satisfè kondisyon RoHS ak Green Product epi li garanti li gen 100% EAS ak fyab fonksyon konplè.
Karakteristik
Teknoloji avanse dansite selil segondè Trench, pandan y ap tou prezante yon chaj pòtay ki ba pou pèfòmans optimal. Anplis de sa, li gen yon ekselan bès efè CdV/dt, yon garanti 100% EAS ak yon opsyon ekolojik-zanmi.
Aplikasyon
High Frequency Point-of-Load Synchrone Buck Converter, Networking DC-DC Power System, Power Tool Application, Elektwonik sigarèt, chaje san fil, dron, medikal, chaje machin, contrôleur, pwodwi dijital, ti aparèy nan kay la, ak elektwonik konsomatè.
Paramèt enpòtan
| Senbòl | Paramèt | Rating | Inite yo | |
| VDS | Drenaj-Sous Voltage | 40 | V | |
| VGS | Gate-Sous Voltage | ± 20 | V | |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS @ 10V1,7 | 320 | A | |
| ID@TC=100℃ | Kouran drenaj kontinyèl, VGS @ 10V1,7 | 192 | A | |
| IDM | Kouran drenaj enpulsyonèl2 | 900 | A | |
| EAS | Single Pulse Lavalas Enèji3 | 980 | mJ | |
| IAS | Kouran Lavalas | 70 | A | |
| PD@TC=25℃ | Dissipasyon pouvwa total4 | 250 | W | |
| TSTG | Ranje Tanperati Depo | -55 a 175 | ℃ | |
| TJ | Operasyon Junction Tanperati Range | -55 a 175 | ℃ |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = 1mA | --- | 0.050 | --- | V/℃ |
| RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS = 10V, ID = 25A | --- | 1.2 | 1.5 | mΩ |
| RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS = 4.5V, ID = 20A | --- | 1.7 | 2.5 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 1.2 | 1.7 | 2.6 | V |
| △VGS(th) | VGS(th) Koefisyan Tanperati | --- | -6,94 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=40V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=40V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktans Avant | VDS = 5V, ID = 50A | --- | 160 | --- | S |
| Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Chaj pòtay total (10V) | VDS=20V, VGS=10V, ID=25A | --- | 130 | --- | nC |
| Qgs | Gate-Sous Charge | --- | 43 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 83 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD=20V, VGEN=4.5V, RG=2.7Ω, ID=1A. | --- | 30 | --- | ns |
| Tr | Leve tan | --- | 115 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 95 | --- | ||
| Tf | Tan Otòn | --- | 80 | --- | ||
| Ciss | Antre kapasite | VDS=20V, VGS=0V, f=1MHz | --- | 8100 | --- | pF |
| Coss | Sòti kapasite | --- | 1200 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 800 | --- |
