WSM340N10G N-chanèl 100V 340A TOLL-8L WINSOK MOSFET
Deskripsyon jeneral
WSM340N10G a se pi gwo pèfòmans tranche N-Ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon yo synchrone Buck Converter.WSM340N10G a satisfè kondisyon RoHS ak Green Product, 100% EAS garanti ak fyab fonksyon konplè apwouve.
Karakteristik
Teknoloji Trench avanse dansite selil segondè, Super Low Gate Charge, Ekselan CdV/dt efè n bès, 100% EAS Garanti, Aparèy Green Disponib.
Aplikasyon
Redresman synchrone, DC/DC konvètisè, switch chaj, ekipman medikal, dron, ekipman pou pouvwa PD, ekipman pou pouvwa dirije, ekipman endistriyèl, elatriye.
Paramèt enpòtan
Evalyasyon maksimòm absoli
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 100 | V |
| VGS | Gate-Sous Voltage | ± 20 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS @ 10V | 340 | A |
| ID@TC=100℃ | Kouran drenaj kontinyèl, VGS @ 10V | 230 | A |
| IDM | Kouran drenaj enpulsyonèl..TC=25°C | 1150 | A |
| EAS | Enèji lavalas, batman kè sèl, L = 0.5mH | 1800 | mJ |
| IAS | Kouran lavalas, batman kè sèl, L = 0.5mH | 120 | A |
| PD@TC=25℃ | Dissipasyon pouvwa total | 375 | W |
| PD@TC=100℃ | Dissipasyon pouvwa total | 187 | W |
| TSTG | Ranje Tanperati Depo | -55 a 175 | ℃ |
| TJ | Operasyon Junction Tanperati Range | 175 | ℃ |
Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = 1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Estatik drenaj-sous sou-rezistans | VGS = 10V, ID = 50A | --- | 1.6 | 2.3 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) Koefisyan Tanperati | --- | -5.5 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=85V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±25V, VDS=0V | --- | --- | ± 100 | nA |
| Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Chaj pòtay total (10V) | VDS=50V, VGS=10V, ID=50A | --- | 260 | --- | nC |
| Qgs | Pòtay-Sous chaj | --- | 80 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 60 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD=50V, VGS=10V,RG=1Ω,RL=1Ω,IDS=1A. | --- | 88 | --- | ns |
| Tr | Leve tan | --- | 50 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 228 | --- | ||
| Tf | Tan Otòn | --- | 322 | --- | ||
| Ciss | Antre kapasite | VDS=40V, VGS=0V, f=1MHz | --- | 13900 | --- | pF |
| Coss | Sòti kapasite | --- | 6160 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 220 | --- |
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