WSP4016 N-chanèl 40V 15.5A SOP-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSP4016

BVDSS:40V

RDSON:11.5mΩ

ID:15.5A

Chèn:N-chanèl

Pake:SOP-8

Pwodwi pandan ete:Vòltaj WSP4016 MOSFET se 40V, aktyèl la se 15.5A, rezistans lan se 11.5mΩ, kanal la se N-chanèl, ak pake a se SOP-8.

Aplikasyon:Elektwonik otomobil, limyè ki ap dirije, odyo, pwodwi dijital, ti aparèy nan kay la, elektwonik konsomatè, ankadreman pwoteksyon, elatriye.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSP4016 a se pi gwo pèfòmans tranche N-ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon pou konvètisè buck synchrone.WSP4016 satisfè egzijans RoHS ak Green Product, 100% EAS garanti ak fyab fonksyon konplè apwouve.

Karakteristik

Teknoloji Trench avanse dansite selil segondè, Super Low Gate Charge, Ekselan CdV/dt efè n bès, 100% EAS Garanti, Aparèy Green Disponib.

Aplikasyon

Blan ki ap dirije konvètisè ranfòse, Sistèm otomobil, Endistriyèl DC/DC konvèsyon sikwi, elektwonik EAutomotive, limyè ki ap dirije, odyo, pwodwi dijital, ti aparèy nan kay la, elektwonik konsomatè, ankadreman pwoteksyon, elatriye.

nimewo materyèl ki koresponn lan

AO AOSP66406, SOU FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.

Paramèt enpòtan

Senbòl	Paramèt	Rating	Inite yo
VDS	Drenaj-Sous Voltage	40	V
VGS	Gate-Sous Voltage	± 20	V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ 10V1	15.5	A
ID@TC=70℃	Kouran drenaj kontinyèl, VGS @ 10V1	8.4	A
IDM	Kouran drenaj enpulsyonèl2	30	A
PD@TA=25℃	Total pouvwa dissipation TA=25°C	2.08	W
PD@TA=70℃	Total pouvwa dissipation TA=70°C	1.3	W
TSTG	Ranje Tanperati Depo	-55 a 150	℃
TJ	Operasyon Junction Tanperati Range	-55 a 150	℃

Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250uA	40	---	---	V
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 10V, ID = 7A	---	8.5	11.5	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 4.5V, ID = 5A	---	11	14.5	mΩ
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID = 250uA	1.0	1.8	2.5	V
IDSS	Kouran Drenaj-Sous Flit	VDS=32V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit	VDS=32V, VGS=0V, TJ=55℃	---	---	25	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS = 5V, ID = 15A	---	31	---	S
Qg	Chaj pòtay total (4.5V)	VDS = 20V, VGS = 10V, ID = 7A	---	20	30	nC
Qgs	Pòtay-Sous chaj		---	3.9	---
Qgd	Gate-Drenaj chaj		---	3	---
Td(sou)	Tan delè vire-sou	VDD = 20V, VGEN = 10V, RG = 1Ω, ID = 1A, RL = 20Ω.	---	12.6	---	ns
Tr	Leve tan		---	10	---
Td (off)	Tan delè pou fèmen		---	23.6	---
Tf	Tan Otòn		---	6	---
Ciss	Antre kapasite	VDS=20V, VGS=0V, f=1MHz	---	1125	---	pF
Coss	Sòti kapasite		---	132	---
Crss	Ranvèse kapasite transfè		---	70	---