WSP4016 N-chanèl 40V 15.5A SOP-8 WINSOK MOSFET
Deskripsyon jeneral
WSP4016 a se pi gwo pèfòmans tranche N-ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon pou konvètisè buck synchrone. WSP4016 a satisfè kondisyon RoHS ak Green Product, 100% EAS garanti ak fyab fonksyon konplè apwouve.
Karakteristik
Teknoloji Trench avanse dansite selil segondè, Super Low Gate Charge, Ekselan CdV/dt efè n bès, 100% EAS Garanti, Aparèy Green Disponib.
Aplikasyon
Blan ki ap dirije konvètisè ranfòse, Sistèm otomobil, Endistriyèl DC/DC konvèsyon sikwi, elektwonik EAutomotive, limyè ki ap dirije, odyo, pwodwi dijital, ti aparèy nan kay la, elektwonik konsomatè, tablo pwoteksyon, elatriye.
nimewo materyèl ki koresponn lan
AO AOSP66406, SOU FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.
Paramèt enpòtan
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 40 | V |
| VGS | Gate-Sous Voltage | ± 20 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 15.5 | A |
| ID@TC=70℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 8.4 | A |
| IDM | Kouran drenaj enpulsyonèl2 | 30 | A |
| PD@TA=25℃ | Total pouvwa dissipation TA=25°C | 2.08 | W |
| PD@TA=70℃ | Total pouvwa dissipation TA=70°C | 1.3 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 40 | --- | --- | V |
| RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS = 10V, ID = 7A | --- | 8.5 | 11.5 | mΩ |
| VGS = 4.5V, ID = 5A | --- | 11 | 14.5 | |||
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 1.0 | 1.8 | 2.5 | V |
| IDSS | Kouran Drenaj-Sous Flit | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 25 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktans Avant | VDS = 5V, ID = 15A | --- | 31 | --- | S |
| Qg | Chaj pòtay total (4.5V) | VDS = 20V, VGS = 10V, ID = 7A | --- | 20 | 30 | nC |
| Qgs | Gate-Sous Charge | --- | 3.9 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 3 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD = 20V, VGEN = 10V, RG = 1Ω, ID = 1A, RL = 20Ω. | --- | 12.6 | --- | ns |
| Tr | Leve tan | --- | 10 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 23.6 | --- | ||
| Tf | Tan Otòn | --- | 6 | --- | ||
| Ciss | Antre kapasite | VDS=20V, VGS=0V, f=1MHz | --- | 1125 | --- | pF |
| Coss | Sòti kapasite | --- | 132 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 70 | --- |
Nòt:
1.Pulse tès: PW<= 300us sik devwa<= 2%.
2.Guaranteed pa konsepsyon, pa sijè a tès pwodiksyon an.
