WSP4099 Doub P-Chanèl -40V -6.5A SOP-8 WINSOK MOSFET
Deskripsyon jeneral
WSP4099 a se yon pwisan tranche P-ch MOSFET ak yon dansite selil segondè. Li delivre ekselan RDSON ak chaj pòtay, ki fè li apwopriye pou pifò aplikasyon pou konvètisè buck synchrone. Li satisfè estanda RoHS ak GreenProduct e li gen 100% garanti EAS ak apwobasyon konplè fyab fonksyon.
Karakteristik
Teknoloji Trench avanse ak dansite selil segondè, chaj pòtay ultra-ba, ekselan efè CdV/dt pouri ak yon garanti 100% EAS se tout karakteristik nan aparèy vèt nou yo ki fasilman disponib.
Aplikasyon
High Frekans Point-of-Chaj Synchrone Buck Converter pou MB/NB/UMPC/VGA, Networking DC-DC Power System, Chaj switch, E-sigarèt, chaje san fil, motè, dron, swen medikal, chajè machin, contrôleur, pwodwi dijital. , ti aparèy kay, ak elektwonik konsomatè.
nimewo materyèl ki koresponn lan
SOU FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A,Sinopower SM4405BSK,dintek DTM4807,ruichips RU40S4H.
Paramèt enpòtan
Senbòl | Paramèt | Rating | Inite yo |
VDS | Drenaj-Sous Voltage | -40 | V |
VGS | Gate-Sous Voltage | ± 20 | V |
ID@TC=25℃ | Kouran drenaj kontinyèl, -VGS @ -10V1 | -6.5 | A |
ID@TC=100℃ | Kouran drenaj kontinyèl, -VGS @ -10V1 | -4.5 | A |
IDM | Kouran drenaj enpulsyonèl2 | -22 | A |
EAS | Single Pulse Lavalas Enèji3 | 25 | mJ |
IAS | Kouran Lavalas | -10 | A |
PD@TC=25℃ | Dissipasyon pouvwa total4 | 2.0 | W |
TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = -250uA | -40 | --- | --- | V |
△BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = -1mA | --- | -0.02 | --- | V/℃ |
RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS=-10V, ID=-6.5A | --- | 30 | 38 | mΩ |
VGS=-4.5V, ID=-4.5A | --- | 46 | 62 | |||
VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID =-250uA | -1.5 | -2.0 | -2.5 | V |
△VGS(th) | VGS(th) Koefisyan Tanperati | --- | 3.72 | --- | V/℃ | |
IDSS | Kouran Drenaj-Sous Flit | VDS=-32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=-32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
gfs | Transkonduktans Avant | VDS=-5V, ID=-4A | --- | 8 | --- | S |
Qg | Total chaj pòtay (-4.5V) | VDS=-20V, VGS=-4.5V, ID=-6.5A | --- | 7.5 | --- | nC |
Qgs | Gate-Sous Charge | --- | 2.4 | --- | ||
Qgd | Gate-Drenaj chaj | --- | 3.5 | --- | ||
Td(sou) | Tan delè vire-sou | VDD=-15V, VGS=-10V, RG=6Ω, ID = -1A, RL = 20Ω | --- | 8.7 | --- | ns |
Tr | Leve tan | --- | 7 | --- | ||
Td (off) | Tan delè pou fèmen | --- | 31 | --- | ||
Tf | Tan Otòn | --- | 17 | --- | ||
Ciss | Antre kapasite | VDS=-15V, VGS=0V, f=1MHz | --- | 668 | --- | pF |
Coss | Sòti kapasite | --- | 98 | --- | ||
Crss | Ranvèse kapasite transfè | --- | 72 | --- |