WSP4447 P-chanèl -40V -11A SOP-8 WINSOK MOSFET
Deskripsyon jeneral
WSP4447 a se yon MOSFET ki gen gwo pèfòmans ki itilize teknoloji tranche epi ki gen yon gwo dansite selil. Li ofri ekselan RDSON ak chaj pòtay, ki fè li apwopriye pou itilize nan pifò aplikasyon pou konvètisè buck synchrone. WSP4447 a satisfè estanda RoHS ak Green Product, epi li vini ak 100% garanti EAS pou fyab konplè.
Karakteristik
Teknoloji Trench avanse pèmèt pou pi wo dansite selil, sa ki lakòz yon Aparèy vèt ak chaj Super Low Gate ak ekselan n bès efè CdV/dt.
Aplikasyon
Konvètè frekans segondè pou yon varyete elektwonik
Konvètè sa a fèt pou alimante yon pakèt aparèy avèk efikasite, tankou òdinatè pòtab, konsole jwèt, ekipman rezo, e-sigarèt, chajè san fil, motè, dron, aparèy medikal, chajè machin, kontwolè, pwodwi dijital, ti aparèy kay, ak konsomatè. elektwonik.
nimewo materyèl ki koresponn lan
AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421，Sinopower SM4403PSK，RUICHIPS RU40L10H.
Paramèt enpòtan
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | -40 | V |
| VGS | Gate-Sous Voltage | ± 20 | V |
| ID@TA=25℃ | Kouran drenaj kontinyèl, VGS @ -10V1 | -11 | A |
| ID@TA=70℃ | Kouran drenaj kontinyèl, VGS @ -10V1 | -9.0 | A |
| IDM a | 300µs Enpulsyonèl Kouran Drenaj (VGS = -10V) | -44 | A |
| EAS b | Enèji lavalas, batman kè sèl (L = 0.1mH) | 54 | mJ |
| IAS b | Kouran lavalas, batman kè sèl (L=0.1mH) | -33 | A |
| PD@TA=25℃ | Dissipasyon pouvwa total4 | 2.0 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = -250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = -1mA | --- | -0.018 | --- | V/℃ |
| RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS=-10V, ID=-13A | --- | 13 | 16 | mΩ |
| VGS=-4.5V, ID=-5A | --- | 18 | 26 | |||
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID =-250uA | -1.4 | -1.9 | -2.4 | V |
| △VGS(th) | VGS(th) Koefisyan Tanperati | --- | 5.04 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=-32V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-32V, VGS=0V, TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktans Avant | VDS=-5V, ID=-10A | --- | 18 | --- | S |
| Qg | Total chaj pòtay (-4.5V) | VDS=-20V, VGS=-10V, ID=-11A | --- | 32 | --- | nC |
| Qgs | Gate-Sous Charge | --- | 5.2 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 8 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD=-20V, VGS=-10V, RG=6Ω, ID=-1A,RL=20Ω | --- | 14 | --- | ns |
| Tr | Leve tan | --- | 12 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 41 | --- | ||
| Tf | Tan Otòn | --- | 22 | --- | ||
| Ciss | Antre kapasite | VDS=-15V, VGS=0V, f=1MHz | --- | 1500 | --- | pF |
| Coss | Sòti kapasite | --- | 235 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 180 | --- |
