WSP4447 P-chanèl -40V -11A SOP-8 WINSOK MOSFET

WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET Imaj Prezantasyon

deskripsyon kout:

Nimewo Modèl:WSP4447

BVDSS:-40V

RDSON:13mΩ

ID:-11A

Chèn:P-chanèl

Pake:SOP-8

Pwodwi pandan ete:Vòltaj WSP4447 MOSFET se -40V, aktyèl la se -11A, rezistans a se 13mΩ, kanal la se P-Chanèl, ak pake a se SOP-8.

Aplikasyon:Sigarèt elektwonik, chajè san fil, motè, dron, aparèy medikal, chajè oto, kontwolè, pwodwi dijital, ti aparèy, ak elektwonik konsomatè.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSP4447 a se yon MOSFET ki gen gwo pèfòmans ki itilize teknoloji tranche epi ki gen yon gwo dansite selil.Li ofri ekselan RDSON ak chaj pòtay, ki fè li apwopriye pou itilize nan pifò aplikasyon pou konvètisè buck synchrone.WSP4447 a satisfè estanda RoHS ak Green Product, epi li vini ak 100% garanti EAS pou fyab konplè.

Karakteristik

Teknoloji Trench avanse pèmèt pou pi wo dansite selilè, sa ki lakòz yon Aparèy Green ak chaj Super Low Gate ak ekselan n bès efè CdV/dt.

Aplikasyon

Konvètè frekans segondè pou yon varyete elektwonik
Konvètè sa a fèt pou alimante yon pakèt aparèy avèk efikasite, tankou òdinatè pòtab, konsole jwèt, ekipman rezo, e-sigarèt, chajè san fil, motè, dron, aparèy medikal, chajè machin, kontwolè, pwodwi dijital, ti aparèy kay, ak konsomatè. elektwonik.

nimewo materyèl ki koresponn lan

AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421，Sinopower SM4403PSK，RUICHIPS RU40L10H.

Paramèt enpòtan

Senbòl	Paramèt	Rating	Inite yo
VDS	Drenaj-Sous Voltage	-40	V
VGS	Gate-Sous Voltage	± 20	V
ID@TA=25℃	Kouran drenaj kontinyèl, VGS @ -10V1	-11	A
ID@TA=70℃	Kouran drenaj kontinyèl, VGS @ -10V1	-9.0	A
IDM a	300µs enpulsyonèl drenaj aktyèl (VGS = -10V)	-44	A
EAS b	Enèji lavalas, batman kè sèl (L = 0.1mH)	54	mJ
IAS b	Kouran lavalas, batman kè sèl (L=0.1mH)	-33	A
PD@TA=25℃	Dissipasyon pouvwa total4	2.0	W
TSTG	Ranje Tanperati Depo	-55 a 150	℃
TJ	Operasyon Junction Tanperati Range	-55 a 150	℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = -250uA	-40	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = -1mA	---	-0.018	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS=-10V, ID=-13A	---	13	16	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2					mΩ
		VGS=-4.5V, ID=-5A	---	18	26
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID =-250uA	-1.4	-1.9	-2.4	V
		VGS = VDS, ID =-250uA
△VGS(th)	VGS(th) Koefisyan Tanperati		---	5.04	---	mV/℃
IDSS	Kouran Drenaj-Sous Flit	VDS=-32V, VGS=0V, TJ=25℃	---	---	-1	uA
IDSS	Kouran Drenaj-Sous Flit					uA
		VDS=-32V, VGS=0V, TJ=55℃	---	---	-5
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS=-5V, ID=-10A	---	18	---	S
Qg	Total chaj pòtay (-4.5V)	VDS=-20V, VGS=-10V, ID=-11A	---	32	---	nC
Qgs	Pòtay-Sous chaj		---	5.2	---
Qgd	Gate-Drenaj chaj		---	8	---
Td(sou)	Tan delè vire-sou	VDD=-20V, VGS=-10V, RG=6Ω, ID=-1A,RL=20Ω	---	14	---	ns
Tr	Leve tan		---	12	---
Td (off)	Tan delè pou fèmen		---	41	---
Tf	Tan Otòn		---	22	---
Ciss	Antre kapasite	VDS=-15V, VGS=0V, f=1MHz	---	1500	---	pF
Coss	Sòti kapasite		---	235	---
Crss	Ranvèse kapasite transfè		---	180	---