WSP6067A N&P-Chanèl 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSP6067A

BVDSS:60V/-60V

RDSON:38mΩ/80mΩ

ID:7A/-5A

Chèn:N&P-Chanèl

Pake:SOP-8

Pwodwi pandan ete:WSP6067A MOSFET a gen yon seri vòltaj 60 vòlt pozitif ak negatif, yon seri aktyèl 7 amp pozitif ak 5 ampè negatif, yon seri rezistans nan 38 miliohms ak 80 miliohms, yon N&P-Chanèl, epi li pake nan SOP-8.

Aplikasyon:E-sigarèt, chajè san fil, motè, dron, swen sante, chajè machin, kontwòl, aparèy dijital, ti aparèy, ak elektwonik pou konsomatè yo.

Voye imèl ba nou PDF

Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WSP6067A MOSFET yo se pi avanse pou teknoloji tranche P-ch, ak yon dansite trè wo nan selil yo.Yo delivre pèfòmans ekselan an tèm de RDSON a ak chaj pòtay, apwopriye pou pifò konvètisè buck synchrone.MOSFET sa yo satisfè kritè RoHS ak Green Product, ak 100% EAS garanti tout fyab fonksyonèl.

Karakteristik

Teknoloji avanse pèmèt fòmasyon tranche selil segondè-dansite, sa ki lakòz chaj pòtay super ba ak siperyè efè CdV/dt pouri.Aparèy nou yo vini ak yon garanti 100% EAS epi yo zanmitay anviwònman an.

Aplikasyon

Konvètè Buck Synchronous Point-of-Chaj segondè Frekans, Rezo DC-DC Power System, Chanjman chaj, E-sigarèt, chaje san fil, motè, dron, ekipman medikal, chajè machin, contrôleur, aparèy elektwonik, ti aparèy kay, ak elektwonik konsomatè. .

nimewo materyèl ki koresponn lan

AOS

Paramèt enpòtan

Senbòl	Paramèt	Rating		Inite yo
Senbòl	Paramèt	N-chanèl	P-chanèl	Inite yo
VDS	Drenaj-Sous Voltage	60	-60	V
VGS	Gate-Sous Voltage	± 20	± 20	V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ 10V1	7.0	-5.0	A
ID@TC=100℃	Kouran drenaj kontinyèl, VGS @ 10V1	4.0	-2.5	A
IDM	Kouran drenaj enpulsyonèl2	28	-20	A
EAS	Single Pulse Lavalas Enèji3	22	28	mJ
IAS	Kouran Lavalas	21	-24	A
PD@TC=25℃	Dissipasyon pouvwa total4	2.0	2.0	W
TSTG	Ranje Tanperati Depo	-55 a 150	-55 a 150	℃
TJ	Operasyon Junction Tanperati Range	-55 a 150	-55 a 150	℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250uA	60	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = 1mA	---	0.063	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 10V, ID = 5A	---	38	52	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 4.5V, ID = 4A	---	55	75	mΩ
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID = 250uA	1	2	3	V
△VGS(th)	VGS(th) Koefisyan Tanperati	VGS = VDS, ID = 250uA	---	-5.24	---	mV/℃
IDSS	Kouran Drenaj-Sous Flit	VDS=48V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit	VDS=48V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS = 5V, ID = 4A	---	28	---	S
Rg	Rezistans pòtay	VDS=0V, VGS=0V, f=1MHz	---	2.8	4.3	Ω
Qg	Chaj pòtay total (4.5V)	VDS=48V, VGS=4.5V, ID=4A	---	19	25	nC
Qgs	Pòtay-Sous chaj		---	2.6	---
Qgd	Gate-Drenaj chaj		---	4.1	---
Td(sou)	Tan delè vire-sou	VDD = 30V, VGS = 10V, RG = 3.3Ω, ID = 1A	---	3	---	ns
Tr	Leve tan		---	34	---
Td (off)	Tan delè pou fèmen		---	23	---
Tf	Tan Otòn		---	6	---
Ciss	Antre kapasite	VDS=15V, VGS=0V, f=1MHz	---	1027	---	pF
Coss	Sòti kapasite		---	65	---
Crss	Ranvèse kapasite transfè		---	45	---