WSP6067A N&P-Chanèl 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET
Deskripsyon jeneral
WSP6067A MOSFET yo se pi avanse pou teknoloji tranche P-ch, ak yon dansite trè wo nan selil yo. Yo delivre pèfòmans ekselan an tèm de RDSON a ak chaj pòtay, apwopriye pou pifò konvètisè buck synchrone. MOSFET sa yo satisfè kritè RoHS ak Green Product, ak 100% EAS garanti tout fyab fonksyonèl.
Karakteristik
Teknoloji avanse pèmèt fòmasyon tranche selil segondè-dansite, sa ki lakòz chaj pòtay super ba ak siperyè efè CdV/dt pouri. Aparèy nou yo vini ak yon garanti 100% EAS epi yo zanmitay anviwònman an.
Aplikasyon
Konvètè Buck Synchronous Point-of-Chaj segondè Frekans, Networking DC-DC Power System, Chaj switch, E-sigarèt, chaje san fil, motè, dron, ekipman medikal, chajè machin, contrôleur, aparèy elektwonik, ti aparèy kay, ak elektwonik konsomatè. .
nimewo materyèl ki koresponn lan
AOS
Paramèt enpòtan
Senbòl | Paramèt | Rating | Inite yo | |
N-chanèl | P-chanèl | |||
VDS | Drenaj-Sous Voltage | 60 | -60 | V |
VGS | Gate-Sous Voltage | ± 20 | ± 20 | V |
ID@TC=25℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 7.0 | -5.0 | A |
ID@TC=100℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 4.0 | -2.5 | A |
IDM | Kouran drenaj enpulsyonèl2 | 28 | -20 | A |
EAS | Single Pulse Lavalas Enèji3 | 22 | 28 | mJ |
IAS | Kouran Lavalas | 21 | -24 | A |
PD@TC=25℃ | Dissipasyon pouvwa total4 | 2.0 | 2.0 | W |
TSTG | Ranje Tanperati Depo | -55 a 150 | -55 a 150 | ℃ |
TJ | Operasyon Junction Tanperati Range | -55 a 150 | -55 a 150 | ℃ |
Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 60 | --- | --- | V |
△BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = 1mA | --- | 0.063 | --- | V/℃ |
RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS = 10V, ID = 5A | --- | 38 | 52 | mΩ |
VGS = 4.5V, ID = 4A | --- | 55 | 75 | |||
VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 1 | 2 | 3 | V |
△VGS(th) | VGS(th) Koefisyan Tanperati | --- | -5.24 | --- | mV/℃ | |
IDSS | Kouran Drenaj-Sous Flit | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
gfs | Transkonduktans Avant | VDS = 5V, ID = 4A | --- | 28 | --- | S |
Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 2.8 | 4.3 | Ω |
Qg | Chaj pòtay total (4.5V) | VDS=48V, VGS=4.5V, ID=4A | --- | 19 | 25 | nC |
Qgs | Gate-Sous Charge | --- | 2.6 | --- | ||
Qgd | Gate-Drenaj chaj | --- | 4.1 | --- | ||
Td(sou) | Tan delè vire-sou | VDD = 30V, VGS = 10V, RG = 3.3Ω, ID = 1A | --- | 3 | --- | ns |
Tr | Leve tan | --- | 34 | --- | ||
Td (off) | Tan delè pou fèmen | --- | 23 | --- | ||
Tf | Tan Otòn | --- | 6 | --- | ||
Ciss | Antre kapasite | VDS=15V, VGS=0V, f=1MHz | --- | 1027 | --- | pF |
Coss | Sòti kapasite | --- | 65 | --- | ||
Crss | Ranvèse kapasite transfè | --- | 45 | --- |