WSR140N12 N-chanèl 120V 140A TO-220-3L WINSOK MOSFET

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WSR140N12 N-chanèl 120V 140A TO-220-3L WINSOK MOSFET

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  • Nimewo Modèl:WSR140N12
  • BVDSS:120V
  • RDSON:5mΩ
  • ID:140A
  • Chèn:N-chanèl
  • Pake:TO-220-3L
  • Pwodwi pandan ete:Vòltaj la nan WSR140N12 MOSFET se 120V, aktyèl la se 140A, rezistans a se 5mΩ, kanal la se N-chanèl, ak pake a se TO-220-3L.
  • Aplikasyon:Ekipman pou pouvwa, medikal, gwo aparèy, BMS elatriye.
  • Pwodwi detay

    Aplikasyon

    Tags pwodwi

    Deskripsyon jeneral

    WSR140N12 a se pi gwo pèfòmans tranche N-ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon yo synchrone Buck Converter. WSR140N12 a satisfè kondisyon RoHS ak Green Product, 100% EAS garanti ak fyab fonksyon konplè apwouve.

    Karakteristik

    Teknoloji avanse dansite selil segondè Trench, Super Low Gate Charge, ekselan n bès efè CdV / dt, 100% EAS garanti, Aparèy Green Disponib.

    Aplikasyon

    High Frekans Point-of-Chaj Synchrone Buck Converter, Networking DC-DC Power System, Ekipman pou pouvwa, medikal, gwo aparèy, BMS elatriye.

    nimewo materyèl ki koresponn lan

    ST STP40NF12 elatriye.

    Paramèt enpòtan

    Senbòl Paramèt Rating Inite yo
    VDS Drenaj-Sous Voltage 120 V
    VGS Gate-Sous Voltage ± 20 V
    ID Kouran drenaj kontinyèl, VGS @ 10V (TC = 25 ℃) 140 A
    IDM Kouran drenaj enpulsyonèl 330 A
    EAS Enèji lavalas batman kè sèl 400 mJ
    PD Dissipasyon total de pouvwa... C=25℃) 192 W
    RθJA Rezistans tèmik, junction-anbyen 62 ℃/W
    RθJC Rezistans tèmik, junction-ka 0.65 ℃/W
    TSTG Ranje Tanperati Depo -55 a 150
    TJ Operasyon Junction Tanperati Range -55 a 150
    Senbòl Paramèt Kondisyon yo Min. Typ. Max. Inite
    BVDSS Drenaj-Sous Pann Voltage VGS = 0V, ID = 250uA 120 --- --- V
    RDS(ON) Estatik Drenaj-Sous Sou-Rezistans2 VGS = 10V, ID = 30A --- 5.0 6.5
    VGS(th) Pòtay Limit Voltage VGS = VDS, ID = 250uA 2.0 --- 4.0 V
    IDSS Kouran Drenaj-Sous Flit VDS=120V, VGS=0V, TJ=25℃ --- --- 1 uA
    IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ± 100 nA
    Qg Total Gate Charge VDS=50V, VGS=10V, ID=15A --- 68.9 --- nC
    Qgs Gate-Sous Charge --- 18.1 ---
    Qgd Gate-Drenaj chaj --- 15.9 ---
    Td(sou) Tan delè vire-sou VDD = 50V, VGS = 10VRG = 2Ω, ID = 25A --- 30.3 --- ns
    Tr Leve tan --- 33.0 ---
    Td (off) Tan delè pou fèmen --- 59.5 ---
    Tf Tan Otòn --- 11.7 ---
    Ciss Antre kapasite VDS=50V, VGS=0V, f=1MHz --- 5823 --- pF
    Coss Sòti kapasite --- 778.3 ---
    Crss Ranvèse kapasite transfè --- 17.5 ---

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