WSR140N12 N-chanèl 120V 140A TO-220-3L WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WSR140N12

BVDSS:120V

RDSON:5mΩ

ID:140A

Chèn:N-chanèl

Pake:TO-220-3L

Pwodwi pandan ete:Vòltaj la nan WSR140N12 MOSFET se 120V, aktyèl la se 140A, rezistans a se 5mΩ, kanal la se N-chanèl, ak pake a se TO-220-3L.

Aplikasyon:Ekipman pou pouvwa, medikal, gwo aparèy, BMS elatriye.

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Pwodwi detay

Aplikasyon

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Deskripsyon jeneral

WSR140N12 a se pi gwo pèfòmans tranche N-ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon yo synchrone Buck Converter.WSR140N12 a satisfè kondisyon RoHS ak Green Product, 100% EAS garanti ak fyab fonksyon konplè apwouve.

Karakteristik

Teknoloji avanse dansite selil segondè Trench, chaj Super Low Gate, ekselan n bès efè CdV / dt, 100% EAS garanti, Aparèy vèt ki disponib.

Aplikasyon

High Frekans Point-of-Chaj Synchrone Buck Converter, Networking DC-DC Power System, Ekipman pou pouvwa, medikal, gwo aparèy, BMS elatriye.

nimewo materyèl ki koresponn lan

ST STP40NF12 elatriye.

Paramèt enpòtan

Senbòl	Paramèt	Rating	Inite yo
VDS	Drenaj-Sous Voltage	120	V
VGS	Gate-Sous Voltage	± 20	V
ID	Kouran drenaj kontinyèl, VGS @ 10V (TC = 25 ℃)	140	A
IDM	Kouran drenaj enpulsyonèl	330	A
EAS	Enèji lavalas batman kè sèl	400	mJ
PD	Dissipasyon total de pouvwa... C=25℃)	192	W
RθJA	Rezistans tèmik, junction-anbyen	62	℃/W
RθJC	Rezistans tèmik, junction-ka	0.65	℃/W
TSTG	Ranje Tanperati Depo	-55 a 150	℃
TJ	Operasyon Junction Tanperati Range	-55 a 150	℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250uA	120	---	---	V
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 10V, ID = 30A	---	5.0	6.5	mΩ
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID = 250uA	2.0	---	4.0	V
IDSS	Kouran Drenaj-Sous Flit	VDS=120V, VGS=0V, TJ=25℃	---	---	1	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
Qg	Total Gate Charge	VDS=50V, VGS=10V, ID=15A	---	68.9	---	nC
Qgs	Pòtay-Sous chaj		---	18.1	---
Qgd	Gate-Drenaj chaj		---	15.9	---
Td(sou)	Tan delè vire-sou	VDD = 50V, VGS = 10VRG = 2Ω, ID = 25A	---	30.3	---	ns
Tr	Leve tan		---	33.0	---
Td (off)	Tan delè pou fèmen		---	59.5	---
Tf	Tan Otòn		---	11.7	---
Ciss	Antre kapasite	VDS=50V, VGS=0V, f=1MHz	---	5823	---	pF
Coss	Sòti kapasite		---	778.3	---
Crss	Ranvèse kapasite transfè		---	17.5	---