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WSR200N08 N-chanèl 80V 200A TO-220-3L WINSOK MOSFET

pwodwi yo

WSR200N08 N-chanèl 80V 200A TO-220-3L WINSOK MOSFET

WSR200N08 N-chanèl 80V 200A TO-220-3L WINSOK MOSFET Imaj prezante
  • WSR200N08 N-chanèl 80V 200A TO-220-3L WINSOK MOSFET

deskripsyon kout:


  • Nimewo Modèl:WSR200N08
  • BVDSS:80V
  • RDSON:2.9mΩ
  • ID:200A
  • Chèn:N-chanèl
  • Pake:TO-220-3L
  • Pwodwi pandan ete:WSR200N08 MOSFET a ka okipe jiska 80 vòlt ak 200 amp ak yon rezistans nan 2.9 miliohms. Li se yon aparèy N-chanèl epi li vini nan yon pake TO-220-3L.
  • Aplikasyon:Sigarèt elektwonik, chajè san fil, motè, sistèm jesyon batri, sous pouvwa backup, machin ayeryen san ekipe, aparèy swen sante, ekipman pou chaje machin elektrik, inite kontwòl, machin enprime 3D, aparèy elektwonik, ti ​​aparèy kay, ak elektwonik konsomatè.
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    Pwodwi detay

    Aplikasyon

    Tags pwodwi

    Deskripsyon jeneral

    WSR200N08 a se pi gwo pèfòmans tranche N-Ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon yo synchrone Buck Converter. WSR200N08 satisfè egzijans RoHS ak Green Product, 100% EAS garanti ak fyab fonksyon konplè apwouve.

    Karakteristik

    Teknoloji Trench avanse dansite selil segondè, Super Low Gate Charge, ekselan n bès efè CdV / dt, 100% EAS garanti, Aparèy vèt ki disponib.

    Aplikasyon

    Chanje aplikasyon, Jesyon pouvwa pou sistèm varyateur, sigarèt elektwonik, chaje san fil, motè, BMS, founiti ijans, dron, medikal, chaje machin, contrôleur, enprimant 3D, pwodwi dijital, ti aparèy nan kay la, elektwonik konsomatè, elatriye.

    nimewo materyèl ki koresponn lan

    AO AOT480L, SOU FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, elatriye.

    Paramèt enpòtan

    Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)

    Senbòl Paramèt Rating Inite yo
    VDS Drenaj-Sous Voltage 80 V
    VGS Gate-Sous Voltage ± 25 V
    ID@TC=25℃ Kouran drenaj kontinyèl, VGS @ 10V1 200 A
    ID@TC=100℃ Kouran drenaj kontinyèl, VGS @ 10V1 144 A
    IDM Enpulsyonèl Kouran drenaj2,TC = 25 °C 790 A
    EAS Enèji lavalas, batman kè sèl, L = 0.5mH 1496 mJ
    IAS Kouran lavalas, batman kè sèl, L = 0.5mH 200 A
    PD@TC=25℃ Dissipasyon pouvwa total4 345 W
    PD@TC=100℃ Dissipasyon pouvwa total4 173 W
    TSTG Ranje Tanperati Depo -55 a 175 ℃
    TJ Operasyon Junction Tanperati Range 175 ℃
    Senbòl Paramèt Kondisyon yo Min. Typ. Max. Inite
    BVDSS Drenaj-Sous Pann Voltage VGS = 0V, ID = 250uA 80 --- --- V
    △BVDSS/△TJ Koefisyan Tanperati BVDSS Referans a 25 ℃, ID = 1mA --- 0.096 --- V/℃
    RDS(ON) Estatik Drenaj-Sous Sou-Rezistans2 VGS = 10V, ID = 100A --- 2.9 3.5 mΩ
    VGS(th) Pòtay Limit Voltage VGS = VDS, ID = 250uA 2.0 3.0 4.0 V
    △VGS(th) VGS(th) Koefisyan Tanperati --- -5.5 --- mV/℃
    IDSS Kouran Drenaj-Sous Flit VDS=80V, VGS=0V, TJ=25℃ --- --- 1 uA
    VDS=80V, VGS=0V, TJ=55℃ --- --- 10
    IGSS Gate-Source Leakage Current VGS=±25V, VDS=0V --- --- ± 100 nA
    Rg Rezistans pòtay VDS=0V, VGS=0V, f=1MHz --- 3.2 --- Ω
    Qg Chaj pòtay total (10V) VDS=80V, VGS=10V, ID=30A --- 197 --- nC
    Qgs Gate-Sous Charge --- 31 ---
    Qgd Gate-Drenaj chaj --- 75 ---
    Td(sou) Tan delè vire-sou VDD=50V, VGS=10V,RG=3Ω, ID=30A --- 28 --- ns
    Tr Leve tan --- 18 ---
    Td (off) Tan delè pou fèmen --- 42 ---
    Tf Tan Otòn --- 54 ---
    Ciss Antre kapasite VDS=15V, VGS=0V, f=1MHz --- 8154 --- pF
    Coss Sòti kapasite --- 1029 ---
    Crss Ranvèse kapasite transfè --- 650 ---
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