WSR200N08 N-chanèl 80V 200A TO-220-3L WINSOK MOSFET
Deskripsyon jeneral
WSR200N08 a se pi gwo pèfòmans tranche N-Ch MOSFET ak dansite selil ekstrèm segondè, ki bay ekselan RDSON ak chaj pòtay pou pi fò nan aplikasyon yo synchrone Buck Converter.WSR200N08 a satisfè egzijans RoHS ak Green Product, 100% EAS garanti ak fyab fonksyon konplè apwouve.
Karakteristik
Teknoloji avanse dansite selil segondè Trench, chaj Super Low Gate, ekselan n bès efè CdV / dt, 100% EAS garanti, Aparèy vèt ki disponib.
Aplikasyon
Chanje aplikasyon, Jesyon pouvwa pou sistèm varyateur, sigarèt elektwonik, chaje san fil, motè, BMS, founiti ijans, dron, medikal, chaje machin, contrôleur, enprimant 3D, pwodwi dijital, ti aparèy nan kay la, elektwonik konsomatè, elatriye.
nimewo materyèl ki koresponn lan
AO AOT480L, SOU FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, elatriye.
Paramèt enpòtan
Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | 80 | V |
| VGS | Gate-Sous Voltage | ± 25 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 200 | A |
| ID@TC=100℃ | Kouran drenaj kontinyèl, VGS @ 10V1 | 144 | A |
| IDM | Enpulsyonèl Kouran Drenaj2,TC = 25°C | 790 | A |
| EAS | Enèji lavalas, batman kè sèl, L = 0.5mH | 1496 | mJ |
| IAS | Kouran lavalas, batman kè sèl, L = 0.5mH | 200 | A |
| PD@TC=25℃ | Dissipasyon pouvwa total4 | 345 | W |
| PD@TC=100℃ | Dissipasyon pouvwa total4 | 173 | W |
| TSTG | Ranje Tanperati Depo | -55 a 175 | ℃ |
| TJ | Operasyon Junction Tanperati Range | 175 | ℃ |
| Senbòl | Paramèt | Kondisyon | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = 1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS = 10V, ID = 100A | --- | 2.9 | 3.5 | mΩ |
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) Koefisyan Tanperati | --- | -5.5 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=80V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=80V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±25V, VDS=0V | --- | --- | ± 100 | nA |
| Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Chaj pòtay total (10V) | VDS=80V, VGS=10V, ID=30A | --- | 197 | --- | nC |
| Qgs | Pòtay-Sous chaj | --- | 31 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 75 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD=50V, VGS=10V,RG=3Ω, ID=30A | --- | 28 | --- | ns |
| Tr | Leve tan | --- | 18 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 42 | --- | ||
| Tf | Tan Otòn | --- | 54 | --- | ||
| Ciss | Antre kapasite | VDS=15V, VGS=0V, f=1MHz | --- | 8154 | --- | pF |
| Coss | Sòti kapasite | --- | 1029 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 650 | --- |
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