WST2011 Doub P-Chanèl -20V -3.2A SOT-23-6L WINSOK MOSFET
Deskripsyon jeneral
WST2011 MOSFET yo se tranzistò P-ch ki pi avanse ki disponib, ki gen dansite selil san parèy. Yo ofri pèfòmans eksepsyonèl, ak ba RDSON ak chaj pòtay, sa ki fè yo ideyal pou ti chanjman pouvwa ak aplikasyon pou switch chaj. Anplis de sa, WST2011 a satisfè estanda RoHS ak Green Product ak gen anpil apwobasyon fyab pou fonksyon konplè.
Karakteristik
Teknoloji Trench avanse pèmèt pou pi wo dansite selil, sa ki lakòz yon Aparèy vèt ak chaj Super Low Gate ak ekselan n bès efè CdV/dt.
Aplikasyon
Segondè frekans pwen-of-chajman synchrone ti pouvwa chanje se apwopriye pou itilize nan MB/NB/UMPC/VGA, rezo DC-DC sistèm pouvwa, switch chaj, e-sigarèt, contrôleur, pwodwi dijital, ti aparèy nan kay la, ak elektwonik konsomatè. .
nimewo materyèl ki koresponn lan
SOU FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,
Paramèt enpòtan
| Senbòl | Paramèt | Rating | Inite yo | |
| 10s | Eta Stable | |||
| VDS | Drenaj-Sous Voltage | -20 | V | |
| VGS | Gate-Sous Voltage | ±12 | V | |
| ID@TA=25℃ | Kouran drenaj kontinyèl, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | Kouran drenaj kontinyèl, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Kouran drenaj enpulsyonèl2 | -12 | A | |
| PD@TA=25℃ | Dissipasyon pouvwa total3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Dissipasyon pouvwa total3 | 1.2 | 0.9 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ | |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ | |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = -250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = -1mA | --- | -0.011 | --- | V/℃ |
| RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS=-4.5V, ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V, ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID =-250uA | -0.5 | -1.0 | -1.5 | V |
| △VGS(th) | VGS(th) Koefisyan Tanperati | --- | 3.95 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=-16V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V, VGS=0V, TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktans Avant | VDS=-5V, ID=-2A | --- | 8.5 | --- | S |
| Qg | Total chaj pòtay (-4.5V) | VDS=-15V, VGS=-4.5V, ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Gate-Sous Charge | --- | 1.1 | 1.7 | ||
| Qgd | Gate-Drenaj chaj | --- | 1.1 | 2.9 | ||
| Td(sou) | Tan delè vire-sou | VDD=-15V, VGS=-4.5V, RG = 3.3Ω, ID = -2A | --- | 7.2 | --- | ns |
| Tr | Leve tan | --- | 9.3 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 15.4 | --- | ||
| Tf | Tan Otòn | --- | 3.6 | --- | ||
| Ciss | Antre kapasite | VDS=-15V, VGS=0V, f=1MHz | --- | 750 | --- | pF |
| Coss | Sòti kapasite | --- | 95 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 68 | --- |
