WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET
Deskripsyon jeneral
WST2078 a se pi bon MOSFET pou ti switch pouvwa ak aplikasyon pou chaj. Li gen yon dansite selil segondè ki bay ekselan RDSON ak chaj pòtay. Li satisfè kondisyon RoHS ak Green Product e li te apwouve pou fyab fonksyon konplè.
Karakteristik
Teknoloji avanse ak tranche dansite selil segondè, chaj pòtay ki ba anpil, ak rediksyon ekselan nan efè Cdv/dt. Aparèy sa a se tou zanmitay anviwònman an.
Aplikasyon
High-frekans pwen-of-chaj synchrone ti pouvwa chanje pafè pou itilize nan MB/NB/UMPC/VGA, rezo DC-DC sistèm pouvwa, switch chaj, e-sigarèt, contrôleur, pwodwi dijital, ti aparèy nan kay la, ak konsomatè. elektwonik.
nimewo materyèl ki koresponn lan
AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.
Paramèt enpòtan
| Senbòl | Paramèt | Rating | Inite yo | |
| N-chanèl | P-chanèl | |||
| VDS | Drenaj-Sous Voltage | 20 | -20 | V |
| VGS | Gate-Sous Voltage | ±12 | ±12 | V |
| ID@Tc=25℃ | Kouran drenaj kontinyèl, VGS @ 4.5V1 | 3.8 | -4.5 | A |
| ID@Tc=70℃ | Kouran drenaj kontinyèl, VGS @ 4.5V1 | 2.8 | -2.6 | A |
| IDM | Kouran drenaj enpulsyonèl2 | 20 | -13 | A |
| PD@TA=25℃ | Dissipasyon pouvwa total3 | 1.4 | 1.4 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | -55 a 150 | ℃ |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = 250uA | 20 | --- | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = 1mA | --- | 0.024 | --- | V/℃ |
| RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS = 4.5V, ID = 3A | --- | 45 | 55 | mΩ |
| VGS = 2.5V, ID = 1A | --- | 60 | 80 | |||
| VGS = 1.8V, ID = 1A | --- | 85 | 120 | |||
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID = 250uA | 0.5 | 0.7 | 1 | V |
| △VGS(th) | VGS(th) Koefisyan Tanperati | --- | -2.51 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=16V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±8V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktans Avant | VDS = 5V, ID = 1A | --- | 8 | --- | S |
| Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 2.5 | 3.5 | Ω |
| Qg | Chaj pòtay total (4.5V) | VDS=10V, VGS=10V, ID=3A | --- | 7.8 | --- | nC |
| Qgs | Gate-Sous Charge | --- | 1.5 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 2.1 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD=10V, VGEN=4.5V, RG=6Ω ID = 3A RL = 10Ω | --- | 2.4 | 4.3 | ns |
| Tr | Leve tan | --- | 13 | 23 | ||
| Td (off) | Tan delè pou fèmen | --- | 15 | 28 | ||
| Tf | Tan Otòn | --- | 3 | 5.5 | ||
| Ciss | Antre kapasite | VDS=10V, VGS=0V, f=1MHz | --- | 450 | --- | pF |
| Coss | Sòti kapasite | --- | 51 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 52 | --- |
Ekri mesaj ou la a epi voye l ba nou
