WST2078 N&P Chèn 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET

WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET Imaj Prezantasyon

deskripsyon kout:

Nimewo Modèl:WST2078

BVDSS:20V/-20V

RDSON:45mΩ/65mΩ

ID:3.8A/-4.5A

Chèn:N&P Channel

Pake:SOT-23-6L

Pwodwi pandan ete:WST2078 MOSFET a gen evalyasyon vòltaj 20V ak -20V.Li ka okipe kouran 3.8A ak -4.5A, e li gen valè rezistans nan 45mΩ ak 65mΩ.MOSFET a gen tou de kapasite N&P Channel epi li vini nan yon pake SOT-23-6L.

Aplikasyon:E-sigarèt, contrôleur, pwodwi dijital, aparèy, ak elektwonik konsomatè.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WST2078 a se pi bon MOSFET pou ti switch pouvwa ak aplikasyon pou chaj.Li gen yon dansite selil segondè ki bay ekselan RDSON ak chaj pòtay.Li satisfè kondisyon RoHS ak Green Product e li te apwouve pou fyab fonksyon konplè.

Karakteristik

Teknoloji avanse ak tranche dansite selil segondè, chaj pòtay ki ba anpil, ak rediksyon ekselan nan efè Cdv/dt.Aparèy sa a se tou zanmitay anviwònman an.

Aplikasyon

High-frekans pwen-of-chaj synchrone ti pouvwa chanje pafè pou itilize nan MB/NB/UMPC/VGA, rezo DC-DC sistèm pouvwa, switch chaj, e-sigarèt, contrôleur, pwodwi dijital, ti aparèy nan kay la, ak konsomatè. elektwonik.

nimewo materyèl ki koresponn lan

AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.

Paramèt enpòtan

Senbòl	Paramèt	Rating		Inite yo
Senbòl	Paramèt	N-chanèl	P-chanèl	Inite yo
VDS	Drenaj-Sous Voltage	20	-20	V
VGS	Gate-Sous Voltage	±12	±12	V
ID@Tc=25℃	Kouran drenaj kontinyèl, VGS @ 4.5V1	3.8	-4.5	A
ID@Tc=70℃	Kouran drenaj kontinyèl, VGS @ 4.5V1	2.8	-2.6	A
IDM	Kouran drenaj enpulsyonèl2	20	-13	A
PD@TA=25℃	Dissipasyon pouvwa total3	1.4	1.4	W
TSTG	Ranje Tanperati Depo	-55 a 150	-55 a 150	℃
TJ	Operasyon Junction Tanperati Range	-55 a 150	-55 a 150	℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = 250uA	20	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = 1mA	---	0.024	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS = 4.5V, ID = 3A	---	45	55	mΩ
		VGS = 2.5V, ID = 1A	---	60	80
		VGS = 1.8V, ID = 1A	---	85	120
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID = 250uA	0.5	0.7	1	V
△VGS(th)	VGS(th) Koefisyan Tanperati	VGS = VDS, ID = 250uA	---	-2.51	---	mV/℃
IDSS	Kouran Drenaj-Sous Flit	VDS=16V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit	VDS=16V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±8V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS=5V, ID=1A	---	8	---	S
Rg	Rezistans pòtay	VDS=0V, VGS=0V, f=1MHz	---	2.5	3.5	Ω
Qg	Chaj pòtay total (4.5V)	VDS=10V, VGS=10V, ID=3A	---	7.8	---	nC
Qgs	Pòtay-Sous chaj		---	1.5	---
Qgd	Gate-Drenaj chaj		---	2.1	---
Td(sou)	Tan delè vire-sou	VDD=10V, VGEN=4.5V, RG=6Ω ID = 3A RL = 10Ω	---	2.4	4.3	ns
Tr	Leve tan		---	13	23
Td (off)	Tan delè pou fèmen		---	15	28
Tf	Tan Otòn		---	3	5.5
Ciss	Antre kapasite	VDS=10V, VGS=0V, f=1MHz	---	450	---	pF
Coss	Sòti kapasite		---	51	---
Crss	Ranvèse kapasite transfè		---	52	---