WST2088 N-chanèl 20V 8.8A SOT-23-3L WINSOK MOSFET

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WST2088 N-chanèl 20V 8.8A SOT-23-3L WINSOK MOSFET

deskripsyon kout:


  • Nimewo Modèl:WST2088
  • BVDSS:20V
  • RDSON:8mΩ
  • ID:8.8A
  • Chèn:N-chanèl
  • Pake:SOT-23-3L
  • Pwodwi pandan ete:Vòltaj WST2088 MOSFET se 20V, aktyèl la se 8.8A, rezistans lan se 8mΩ, kanal la se N-chanèl, ak pake a se SOT-23-3L.
  • Aplikasyon:Sigarèt elektwonik, contrôleur, aparèy dijital, ti aparèy kay, ak elektwonik konsomatè.
  • Pwodwi detay

    Aplikasyon

    Tags pwodwi

    Deskripsyon jeneral

    WST2088 MOSFET yo se tranzistò N-chanèl ki pi avanse sou mache a.Yo gen yon dansite selil ekstrèmman wo, ki rezilta nan ekselan RDSON ak chaj pòtay.MOSFETs sa yo pafè pou ti pouvwa pou chanje ak aplikasyon pou chanje chaj.Yo satisfè kondisyon RoHS ak Green Product epi yo te konplètman teste pou fyab.

    Karakteristik

    Teknoloji Trench avanse ak dansite selil segondè, Super Low Gate Charge, ak ekselan Cdv/dt efè n bès, fè li yon Aparèy Green.

    Aplikasyon

    Aplikasyon pou pouvwa, sikui ak switch difisil ak frekans segondè, ekipman pou pouvwa san enteripsyon, e-sigarèt, contrôleur, aparèy elektwonik, ti ​​aparèy kay, ak elektwonik konsomatè.

    nimewo materyèl ki koresponn lan

    AO AO3416, DINTEK DTS2300A DTS2318 DTS2314 DTS2316 DTS2322 DTS3214, elatriye.

    Paramèt enpòtan

    Senbòl Paramèt Rating Inite yo
    VDS Drenaj-Sous Voltage 20 V
    VGS Gate-Sous Voltage ±12 V
    ID@Tc=25℃ Kouran drenaj kontinyèl, VGS @ 4.5V 8.8 A
    ID@Tc=70℃ Kouran drenaj kontinyèl, VGS @ 4.5V 6.2 A
    IDP Kouran drenaj enpulsyonèl 40 A
    PD@TA=25℃ Dissipasyon pouvwa total 1.5 W
    TSTG Ranje Tanperati Depo -55 a 150
    TJ Operasyon Junction Tanperati Range -55 a 150

    Karakteristik elektrik (TJ = 25 ℃, sof si otreman te note)

    Senbòl Paramèt Kondisyon Min. Typ. Max. Inite
    BVDSS Drenaj-Sous Pann Voltage VGS = 0V, ID = 250uA 20 --- --- V
    △BVDSS/△TJ Koefisyan Tanperati BVDSS Referans a 25 ℃, ID = 1mA --- 0.018 --- V/℃
    RDS(ON) Estatik Drenaj-Sous Sou-Rezistans2 VGS = 4.5V, ID = 6A --- 8 13
    VGS = 2.5V, ID = 5A --- 10 19
    VGS(th) Pòtay Limit Voltage VGS = VDS, ID = 250uA 0.5 --- 1.3 V
    IDSS Kouran Drenaj-Sous Flit VDS = 16V, VGS = 0V. --- --- 10 uA
    IGSS Gate-Source Leakage Current VGS=±12V, VDS=0V --- --- ± 100 nA
    Qg Total Gate Charge VDS=15V, VGS=4.5V, ID=6A --- 16 --- nC
    Qgs Pòtay-Sous chaj --- 3 ---
    Qgd Gate-Drenaj chaj --- 4.5 ---
    Td(sou) Tan delè vire-sou VDS = 10V, VGS = 4.5V, RG = 3.3Ω ID = 1A --- 10 --- ns
    Tr Leve tan --- 13 ---
    Td (off) Tan delè pou fèmen --- 28 ---
    Tf Tan Otòn --- 7 ---
    Ciss Antre kapasite VDS=15V, VGS=0V, f=1MHz --- 1400 --- pF
    Coss Sòti kapasite --- 170 ---
    Crss Ranvèse kapasite transfè --- 135 ---

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