WST4041 P-Channel -40V -6A SOT-23-3L WINSOK MOSFET

deskripsyon kout:

Nimewo Modèl:WST4041

BVDSS:-40V

RDSON:30mΩ

ID:-6A

Chèn:P-chanèl

Pake:SOT-23-3L

Pwodwi pandan ete:WST4041 MOSFET la gen yon vòltaj -40V, aktyèl -6A, rezistans 30mΩ, P-Channel, ak anbalaj SOT-23-3L.

Aplikasyon:Sigarèt elektwonik, contrôleur, pwodwi dijital, ti aparèy, elektwonik konsomatè.

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Pwodwi detay

Aplikasyon

Tags pwodwi

Deskripsyon jeneral

WST4041 a se yon pwisan MOSFET P-chanèl ki fèt pou itilize nan konvètisè Buck synchrone.Li gen yon dansite selil segondè ki pèmèt RDSON ekselan ak chaj pòtay.WST4041 a satisfè kondisyon pou RoHS ak estanda pwodwi vèt, epi li vini ak yon garanti 100% EAS pou pèfòmans serye.

Karakteristik

Teknoloji Trench avanse karakteristik dansite selil segondè ak chaj pòtay super ba, siyifikativman diminye efè CdV/dt.Aparèy nou yo vini ak yon garanti 100% EAS ak opsyon zanmitay anviwònman an.

Aplikasyon

High-frekans pwen-of-chaj synchrone Buck Converter, rezo DC-DC sistèm pouvwa, switch chaj, e-sigarèt, contrôleur, aparèy dijital, ti aparèy kay, ak elektwonik konsomatè.

nimewo materyèl ki koresponn lan

AOS AO3409 AOS3403 AOS3421 AOS3421E AO3401 AOS3401A,dintek DTS4501,ncepower NCE40P05Y,

Paramèt enpòtan

Senbòl	Paramèt	Rating	Inite yo
VDS	Drenaj-Sous Voltage	-40	V
VGS	Gate-Sous Voltage	± 20	V
ID@TC=25℃	Kouran drenaj kontinyèl, VGS @ -10V1	-6.0	A
ID@TC=100℃	Kouran drenaj kontinyèl, VGS @ -10V1	-4.5	A
IDM	Kouran drenaj enpulsyonèl2	-24	A
EAS	Single Pulse Lavalas Enèji3	12	mJ
IAS	Kouran Lavalas	-7	A
PD@TC=25℃	Dissipasyon pouvwa total4	1.4	W
TSTG	Ranje Tanperati Depo	-55 a 150	℃
TJ	Operasyon Junction Tanperati Range	-55 a 150	℃

Senbòl	Paramèt	Kondisyon	Min.	Typ.	Max.	Inite
BVDSS	Drenaj-Sous Pann Voltage	VGS = 0V, ID = -250uA	-40	---	---	V
△BVDSS/△TJ	Koefisyan Tanperati BVDSS	Referans a 25 ℃, ID = -1mA	---	-0.03	---	V/℃
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS=-10V, ID=-3A	---	30	40	mΩ
RDS(ON)	Estatik Drenaj-Sous Sou-Rezistans2	VGS=-4.5V, ID=-1A	---	40	58	mΩ
VGS(th)	Pòtay Limit Voltage	VGS = VDS, ID =-250uA	-0.8	-1.2	-2.2	V
△VGS(th)	VGS(th) Koefisyan Tanperati	VGS = VDS, ID =-250uA	---	4.56	---	mV/℃
IDSS	Kouran Drenaj-Sous Flit	VDS=-28V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Kouran Drenaj-Sous Flit	VDS=-28V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktans Avant	VDS=-5V, ID=-3A	---	15	---	S
Rg	Rezistans pòtay	VDS=0V, VGS=0V, f=1MHz	---	3.8	---	Ω
Qg	Total chaj pòtay (-4.5V)	VDS=-18V, VGS=-10V, ID=-4A	---	9.5	---	nC
Qgs	Pòtay-Sous chaj		---	1.7	---
Qgd	Gate-Drenaj chaj		---	2.0	---
Td(sou)	Tan delè vire-sou	VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω	---	8	---	ns
Tr	Leve tan		---	10	---
Td (off)	Tan delè pou fèmen		---	18	---
Tf	Tan Otòn		---	8	---
Ciss	Antre kapasite	VDS=-15V, VGS=0V, f=1MHz	---	420	---	pF
Coss	Sòti kapasite		---	77	---
Crss	Ranvèse kapasite transfè		---	55	---