WST4041 P-Channel -40V -6A SOT-23-3L WINSOK MOSFET
Deskripsyon jeneral
WST4041 a se yon pwisan MOSFET P-chanèl ki fèt pou itilize nan konvètisè Buck synchrone. Li gen yon dansite selil segondè ki pèmèt RDSON ekselan ak chaj pòtay. WST4041 a satisfè kondisyon pou RoHS ak estanda pwodwi vèt, epi li vini ak yon garanti 100% EAS pou pèfòmans serye.
Karakteristik
Teknoloji Trench avanse karakteristik dansite selil segondè ak chaj pòtay super ba, siyifikativman diminye efè CdV/dt. Aparèy nou yo vini ak yon garanti 100% EAS ak opsyon zanmitay anviwònman an.
Aplikasyon
High-frekans point-of-load synchrone Buck Converter, rezo DC-DC sistèm pouvwa, switch chaj, e-sigarèt, contrôleur, aparèy dijital, ti aparèy kay, ak elektwonik konsomatè.
nimewo materyèl ki koresponn lan
AOS AO3409 AOS3403 AOS3421 AOS3421E AO3401 AOS3401A,dintek DTS4501,ncepower NCE40P05Y,
Paramèt enpòtan
| Senbòl | Paramèt | Rating | Inite yo |
| VDS | Drenaj-Sous Voltage | -40 | V |
| VGS | Gate-Sous Voltage | ± 20 | V |
| ID@TC=25℃ | Kouran drenaj kontinyèl, VGS @ -10V1 | -6.0 | A |
| ID@TC=100℃ | Kouran drenaj kontinyèl, VGS @ -10V1 | -4.5 | A |
| IDM | Kouran drenaj enpulsyonèl2 | -24 | A |
| EAS | Single Pulse Lavalas Enèji3 | 12 | mJ |
| IAS | Kouran Lavalas | -7 | A |
| PD@TC=25℃ | Dissipasyon pouvwa total4 | 1.4 | W |
| TSTG | Ranje Tanperati Depo | -55 a 150 | ℃ |
| TJ | Operasyon Junction Tanperati Range | -55 a 150 | ℃ |
| Senbòl | Paramèt | Kondisyon yo | Min. | Typ. | Max. | Inite |
| BVDSS | Drenaj-Sous Pann Voltage | VGS = 0V, ID = -250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | Koefisyan Tanperati BVDSS | Referans a 25 ℃, ID = -1mA | --- | -0.03 | --- | V/℃ |
| RDS(ON) | Estatik Drenaj-Sous Sou-Rezistans2 | VGS=-10V, ID=-3A | --- | 30 | 40 | mΩ |
| VGS=-4.5V, ID=-1A | --- | 40 | 58 | |||
| VGS(th) | Pòtay Limit Voltage | VGS = VDS, ID =-250uA | -0.8 | -1.2 | -2.2 | V |
| △VGS(th) | VGS(th) Koefisyan Tanperati | --- | 4.56 | --- | mV/℃ | |
| IDSS | Kouran Drenaj-Sous Flit | VDS=-28V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-28V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktans Avant | VDS=-5V, ID=-3A | --- | 15 | --- | S |
| Rg | Rezistans pòtay | VDS=0V, VGS=0V, f=1MHz | --- | 3.8 | --- | Ω |
| Qg | Total chaj pòtay (-4.5V) | VDS=-18V, VGS=-10V, ID=-4A | --- | 9.5 | --- | nC |
| Qgs | Gate-Sous Charge | --- | 1.7 | --- | ||
| Qgd | Gate-Drenaj chaj | --- | 2.0 | --- | ||
| Td(sou) | Tan delè vire-sou | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω | --- | 8 | --- | ns |
| Tr | Leve tan | --- | 10 | --- | ||
| Td (off) | Tan delè pou fèmen | --- | 18 | --- | ||
| Tf | Tan Otòn | --- | 8 | --- | ||
| Ciss | Antre kapasite | VDS=-15V, VGS=0V, f=1MHz | --- | 420 | --- | pF |
| Coss | Sòti kapasite | --- | 77 | --- | ||
| Crss | Ranvèse kapasite transfè | --- | 55 | --- |
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